A method for HBT process control and defect detection using pulsed electrical stress

Sydlo, Cezary; Mottet, B.; Schubler, Martin; Brandt, M.; Hartnagel, H.L.

doi:10.1016/s0026-2714(00)00142-6

Cited by 3 publications

(3 citation statements)

References 10 publications

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“…Additionally, temperature rise of component metal layers due to increasing current densities with associated self-heating effects can strongly impact the maximum temperature of the structure which affects metal connection reliability [13]. Banerjee et al [14] have studied the effect of metal self-heating on the electromigration reliability of very large scale integrated (VLSI) interconnects, where the metal temperature T m is given by…”

Section: Coupling-induced Currentmentioning

confidence: 99%

“…Moreover, the typical forward Gummel plots measured for different stressing times show that the collector current remains unchanged during the stress while a large degradation of the base current occurs [16]. The shift in base current has been attributed to the generation of a damage region between the base and the emitter at the Si-SiO 2 interface [1,7,17] and/or at the metal interface (metallurgical interactions) [13,18]. As the current is fed into the base-emitter diode of the HBT, one would expect only this junction to be degraded by stress.…”

Section: Effects On the DC And Rf Characteristicsmentioning

confidence: 99%

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Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress

Alaeddine¹,

Genevois²,

Kadi³

et al. 2010

Semicond. Sci. Technol.

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This paper addresses electromagnetic field stress effects on SiGe heterojunction bipolar transistors (HBTs)' reliability issues, focusing on the relationship between the stress-induced current and device structure degradations. The origin of leakage currents and electrical parameter shifts in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure before and after ageing was performed by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). For the stressed samples, interface deformations of the titanium (Ti) thin film around all gold (Au) contacts have been clearly detected. These degradations include localized interface reaction between Au and Ti layers as well as their lateral atomic migration causing a significant reduction of Ti thickness. EDS analysis of the disordered region which is near the Si 3 N 4 interface has shown significant signals from Au. These observations could be attributed to the coupling between high current densities induced by stress and thermal effects due to local heating effects.

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Section: Coupling-induced Currentmentioning

confidence: 99%

Section: Effects On the DC And Rf Characteristicsmentioning

confidence: 99%

Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress

Alaeddine¹,

Genevois²,

Kadi³

et al. 2010

Semicond. Sci. Technol.

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“…We found that the value of the induced current in front of the base reaches 30 mA, whereas the base breakdown current is around 200 μA [ 7 ]. In fact, temperature rise of component metal layers due to increasing current densities with associated self-heating effects can strongly affect metal connection reliability [ 8 ]. Banerjee and Mehrota [ 9 ] have studied the effect of metal self-heating on the electromigration reliability by describing the strong relationship that exists between the heat generation and the injected flow current.…”

Section: Methodsmentioning

confidence: 99%

STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs

et al. 2011

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A new insight on the behavior of metal contact-insulating interfaces in SiGe heterojunction bipolar transistor is given by high-performance aberration-corrected scanning transmission electron microscopy (STEM) analysis tools equipped with sub-nanometric probe size. It is demonstrated that the presence of initial defects introduced during technological processes play a major role in the acceleration of degradation mechanisms of the structure during stress. A combination of energy-filtered transmission electron microscopy analysis with high angle annular dark field STEM and energy dispersive spectroscopy provides strong evidence that migration of Au-Pt from the metal contacts to Ti/Si3N4 interface is one of the precursors to species interdiffusion and reactions. High current densities and related local heating effects induce the evolution of the pure Ti initial layer into mixture layer composed of Ti, O, and N. Local contamination of Ti layers by fluorine atoms is also pointed out, as well as rupture of TiN thin barrier layer.

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