A Method of Obtaining Simultaneous Complementary Spectroscopic Information on Self-Assembled Quantum Dots

Sharma, T. K.; Hosea, T. J. C.

doi:10.1143/jjap.48.082301

Cited by 3 publications

(2 citation statements)

References 26 publications

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“…All spectra were measured using the conventional combination of a single-grating monochromator, InGaAs photodiode detector, and lock-in amplifier. 15 …”

Section: à3mentioning

confidence: 99%

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

Blume

Hild

Marko

et al. 2012

Journal of Applied Physics

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Articles you may be interested inDetecting and tuning anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs verticalcavity surface-emitting laser J. Appl. Phys. 111, 043109 (2012) We present a combination of spectroscopy and device measurements on GaAsSb/GaAs vertical-cavity surface-emitting laser (VCSEL) structures to determine the temperature at which the wavelength of the VCSEL cavity mode (CM) aligns with that of the quantum well (QW) ground-state transition (GST), and therefore the gain peak. We find that, despite the achievement of room temperature (RT) continuous wave lasing in VCSEL devices, the QW transition and the CM are actually slightly misaligned at this temperature; room temperature electroluminescence measurements from a cleaved edge of the VCSEL wafer indicate that the 300 K QW GST energy is at 0.975 6 0.005 eV, while the CM measured in the VCSEL surface reflectivity spectra is at 0.9805 6 0.0002 eV. When the wafer sample is cooled, the CM and QW GST can be brought into alignment at 270 6 10 K, as confirmed by temperature-dependent electro-modulated reflectance (ER) and edge-electroluminescence spectroscopic studies. This alignment temperature is further confirmed by comparing the temperature dependence of the emission energy of a fabricated VCSEL device with that of an edge-emitting laser structure with a nominally identical active region. The study suggests that for further device improvement, the room temperature CM and QW GST energies should be more closely matched and both designed to a smaller energy of about 0.95 eV, somewhat closer to the 1.31 lm target. The study amply demonstrates the usefulness of non-destructive ER characterisation techniques in VCSEL manufacturing with GaAsSb-based QWs. V C 2012 American Institute of Physics.[http://dx

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“…All spectra were measured using the conventional combination of a single-grating monochromator, InGaAs photodiode detector, and lock-in amplifier. 15 …”

Section: à3mentioning

confidence: 99%

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

Blume

Hild

Marko

et al. 2012

Journal of Applied Physics

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“…22,23) Sharma and coworkers also demonstrated the use of complementary spectroscopic techniques, which showed that PL and SPV spectroscopies are powerful tools for the nondestructive optical characterization of InAs=InGaAs=InP QD structures. 24,25) In this work, we conduct SPV and PL spectroscopic techniques to characterize the optical properties of GaAsSb=GaAs type-II QWs with top InAs QD layer composite structures grown by gas-source molecular beam epitaxy (GSMBE). The optical transitions from QDs, the wetting layer (WL), as well as GaAsSb=GaAs QWs were investigated.…”

Section: Introductionmentioning

confidence: 99%

Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques

Hsu

Lin

et al. 2015

Jpn. J. Appl. Phys.

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A new type of high-temperature attachment was constructed to make precise measurement by Bond's method on lattice parameters of relatively large single crystals. This attachment is capable of tilting and traversing of a single crystal specimen in a vacuum or inert gas atmosphere in the outer metal cover at any time during the operation of the furnace. Special attention was given to the exact determination of specimen temperature in a wide range from room temperature up to 1500 K . The temperature is kept constant to within i O . 5 K during measurement in the above range. The accuracy of specimen temperature determination is i 1.6 K at 1000 K and i 2 . 3 K at 1500 K. With a nearly perfect single Si crystal we measured lattice parameters at room temperature. 1300 and 1400 K to a few parts per million.

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Quantitative Determination of Luminescent Coupling in Multijunction Solar Cells from Spectral Photovoltage Measurements

et al. 2016

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7We present a simple method to quantify the magnitude of luminescent coupling (LC) between stacked 8 subcells in multijunction photovoltaic devices. The effect of luminescence produced at high-band-gap 9 subcells on underlying low-gap units within the same device can be directly accessed as a measurable open-10 circuit voltage difference by comparing two photovoltage spectra. Additionally, our study unambiguously 11 identifies LC as the modulation mechanism across multijunction solar cells generating a response from 12 buried subcells in photoreflectance measurements.

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A Method of Obtaining Simultaneous Complementary Spectroscopic Information on Self-Assembled Quantum Dots

Cited by 3 publications

References 26 publications

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques

Quantitative Determination of Luminescent Coupling in Multijunction Solar Cells from Spectral Photovoltage Measurements

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