Surface differential reflectivity together with photoemissioii and Auger electron spectroscopies have been applied to observe and identify optical transitions among surface related states on CdTe(110) surfaces. The strongest contributions to the band of optical transitions have been revealed at the photon energies of 2.8, 3.4, and 3.9 eV. Their correspondence to excitations from the occupied S1 band to the unoccupied U1 one at the Γ, Χ and Χ' points of the surface Brillouin zone is discussed. substrates and emerging projects of optoelectronic devices based on wide gap II-VI compounds directly implanted into Si-or III-V-based electronic circuits considerably intensifled investigations of II-VI semiconductor electronic structures. Particular interest is focused on their atomic and electronic surface structures. CdTe is one of the most popular subjects of the studies [3][4][5][6][7][8][9][10][11][12][13][14]. Apart from the classic optical and transport measurements the most advanced experimental methods were applied to acquire detailed information about its bulk and surface electronic structure. The photoemission measurements [3-8] gave almost a complete scheme of the occupied bulk states. The results of theoretical calculations [5,6,[9][10][11] generally fit well the experimental data. In spite of charging effects which make such measurements impossible for undoped, as-grown CdTe of the high resistivity, some data on the empty surface states have also been obtained (for Ga-doped n-type crystals) by means of k-resolved inverse photoemission spectroscopy (KRIPES) [13]. Some complementary information was deduced from electron energy loss spectra [14].In this paper we report our contribution to the investigation of CdTe surface properties. The CdTe(110) surface, cleaved under UHV conditions, was studied in situ by means of surface differential reflectivity (SDR), ultraviolet photoemission (UPS) and Auger electron (AES) spectroscopies. We applied SDR spectroscopy as a tool for determination of energy gaps between occupied and empty states.