1985
DOI: 10.1016/0022-3697(85)90101-5
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A minimal basis semi-ab initio approach to the band structures of semiconductors

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Cited by 294 publications
(47 citation statements)
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“…The location of these two maxima in the photoemission spectrum appears to fit very well with the major density of states ͑DOS͒ features predicted in band structure calculations. 10 In Fig. 2, the VBM is 3.5Ϯ0.1 eV below the experimental Fermi level, which can be viewed as the band gap value if we assume that the Fermi level is right at the conduction band minimum ͑CBM͒, consistent with our separate photoluminescence measurement 22 which shows a 3.37 eV band gap for these films.…”
supporting
confidence: 82%
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“…The location of these two maxima in the photoemission spectrum appears to fit very well with the major density of states ͑DOS͒ features predicted in band structure calculations. 10 In Fig. 2, the VBM is 3.5Ϯ0.1 eV below the experimental Fermi level, which can be viewed as the band gap value if we assume that the Fermi level is right at the conduction band minimum ͑CBM͒, consistent with our separate photoluminescence measurement 22 which shows a 3.37 eV band gap for these films.…”
supporting
confidence: 82%
“…Numerous band structure calculations have been performed. [6][7][8][9][10][11] They have been compared with optical measurements 12 and limited photoemission spectroscopy measurements. [13][14][15][16][17][18][19] There have as yet been no systematic measurements on surfaces of GaN that are believed to be clean.…”
mentioning
confidence: 99%
“…The photoemission measurements [3][4][5][6][7][8] gave almost a complete scheme of the occupied bulk states. The results of theoretical calculations [5,6,[9][10][11] generally fit well the experimental data. In spite of charging effects which make such measurements impossible for undoped, as-grown CdTe of the high resistivity, some data on the empty surface states have also been obtained (for Ga-doped n-type crystals) by means of k-resolved inverse photoemission spectroscopy (KRIPES) [13].…”
supporting
confidence: 62%
“…Particular interest is focused on their atomic and electronic surface structures. CdTe is one of the most popular subjects of the studies [3][4][5][6][7][8][9][10][11][12][13][14]. Apart from the classic optical and transport measurements the most advanced experimental methods were applied to acquire detailed information about its bulk and surface electronic structure.…”
mentioning
confidence: 99%
“…This material has found many technological applications 4 motivating considerable study in theoretical [5][6][7][8][9][10][11][12][13] and experimental 14 investigations. Due to its high intrinsic thermal conductivity, AlN is attractive as an electronic packaging substrate.…”
Section: Introductionmentioning
confidence: 99%