2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)
DOI: 10.1109/rfic.2000.854446
|View full text |Cite
|
Sign up to set email alerts
|

A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends

Abstract: A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky niiser diode has been developed for 77 GHz autoniotive radar systems. It facilitates the realization 0 1 i~ high performance millimeter-wave radar front-end with a minimum amount of chip area and, coiisequently, low production costs.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
5
0

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 18 publications
(5 citation statements)
references
References 8 publications
0
5
0
Order By: Relevance
“…Recently, the 77 GHz automotive radars has become popular, as reflected in the literatures [1][5] . In a typical automotive radar application, the transmitting power from the transceiver is 10 dBm at the antenna port.…”
Section: ⅰ Introductionmentioning
confidence: 99%
“…Recently, the 77 GHz automotive radars has become popular, as reflected in the literatures [1][5] . In a typical automotive radar application, the transmitting power from the transceiver is 10 dBm at the antenna port.…”
Section: ⅰ Introductionmentioning
confidence: 99%
“…Recently the ITS (Intelligent Transportation System) group proposed the deployment of Xband FMCW sensor for detection of vehicle volume, occupancy, speed, and classifications of multi-lane highway transportation system. Although most of FMCW-based sensors known to date had been made by the hybrid microwave/millimeter-wave integrated circuits [5], literature survey indicated that a handful of FMCW chips were reported, namely, 94 GHz radar [1,3,4], 77 GHz sensor [6,7], 10 GHz radar [8], 4.8 GHz Doppler sensor [2], all made by GaAs MMIC (monolithic microwave/millimeter-wave integrated circuit) technology. To authors' best knowledge, we present the first CMOS multifunction chip for use in RF front-end of the FMCW-based sensor or radar.…”
Section: Introductionmentioning
confidence: 99%
“…Multiwavelength generation based on Erbium-doped fiber lasers (EDFLs) have been proposed and demonstrated in the C-hand (1530-1565-nm) region for various schemes. Significant progress has been made in improving the schemes and performance of multiwavelength EDFLs during the past few years [1][2][3]. Multiwavelength oscillation in the L-hand (1570-1605 nm) has also been demonstrated [4][5][6].…”
Section: Introductionmentioning
confidence: 99%