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transformed from the outer to the inner FET reference planes ABSTRACT A new method is developed which permits a direct nonlinear FET parameter extraction of the gate source capacitor and diode, the drain current generator and the avalanche breakdown characteristics from large-signal waveform measurements. Differences between the DC and RF characteristics of the drain current generator and the breakdown characteristics are observed and interpreted. The measured FET output power and phase spectra are compared with the simulated results for different RF models of the nonlinear drain current generator. The proposed method is a valuable instrument for the analysis of the actually existing high frequency FET nonlinearities and can be helpful in the improvement of large-signal FET models.

A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky niiser diode has been developed for 77 GHz autoniotive radar systems. It facilitates the realization 0 1 i~ high performance millimeter-wave radar front-end with a minimum amount of chip area and, coiisequently, low production costs.

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