Low cost GaAs PHEMT MMICs for millimeter wave sensor applications

Siweris, H.J.; Werthof, A.; Tischer, H.; Schaper, U.; Schäfer, Armin; Verweyen, L.; Grave, T.; Böck, Georg; Schlechtweg, M.; Kellner, W.

doi:10.1109/rfic.1998.682099

Cited by 8 publications

(3 citation statements)

References 4 publications

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“…Thus, W-band FMCW radars have been reported for many radar applications in the literature. [2][3][4][5][6][7] With the advancement of the Silicon technology that can bring the benefits of lower cost, higher integration, and low power consumption, various W-band designs have been reported recently. 8,9 However, in the homodyne FMCW radar, the leakage of the transmitted power can easily contaminate the input of the receiver front-end which can saturate a low noise amplifier (LNA) at the front-end, which results in a severe deterioration in the receiver sensitivity.…”

Section: Introductionmentioning

confidence: 99%

A compact W‐band mixer‐first receiver in 65 nm CMOS

Nam

Park

2019

Micro & Optical Tech Letters

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We present a compact W‐band mixer‐first receiver consisting of a passive single‐balanced mixer, on‐chip balun, and a variable gain amplifier with 1.9 GHz of bandwidth over a gain range of 36 dB in 65 nm CMOS. The W‐band front‐end has been implemented aiming at a compact frequency‐modulated continuous‐wave (FMCW) radar as a proximity sensor, and a down‐converting chain for a total power radiometer combined with external low noise amplifier. The measured gain of the W‐band receiver is 25 dB, and the receiver achieves 2.57 dBm of IIP3. The integrated receiver consumes 14.56 mA from a supply voltage of 1.2 V, and the core chip occupies only 0.39 mm2.

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Section: Introductionmentioning

confidence: 99%

A compact W‐band mixer‐first receiver in 65 nm CMOS

Nam

Park

2019

Micro & Optical Tech Letters

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“…Millimeter wave radar is a key technology for such safety systems. Up to now this field was dominated by III/V semiconductors [1]. Recent advances in SiGe bipolar technology have stimulated research activities to investigate the use of silicon based circuits for emerging applications like automotive radar sensors at frequencies from 76-to 81GHz.…”

Section: Introductionmentioning

confidence: 99%

A 19GHz DRO downconverter MMIC for 77GHz automotive radar frontends in a SiGe bipolar production technology

Forstner

Wohlmuth

Knapp

et al. 2008

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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ó A D ielectric Resonator Oscillator (DRO) based 19GHz downconverter is presented, which has been integrated in a 200 GHz f T SiGe production technology. The circuits, a negative resistance block and a mixer, have been designed differentially. The DRO is optimized for low phase noise and operates at typically 18 GHz. The mixer converts the by-4-devided signal of a 77GHz fundamental oscillator to around 1GHz. Mixer conversion gain is on the order of ñ16dB and the input referred 1 dB compression point is about 0dBm. Phase Noise of the DRO is ñ115dBc/Hz at an offset frequency of 100kHz. The power dissipation of the complete MMIC is 94mW, operating off a supply voltage of +5.5V.

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“…The frequency modulation continuous wave (FMCW) radar sensor is widely used for both range and velocity determination [1]- [3]. It is advantageous if the chip has a local oscillator (LO) that can provide a transmitted signal to the antenna, a LO signal to the transceiver mixer and a signal to an off-chip PLL. One conventional solution is to multiply a LO signal at a lower frequency -this lower frequency being inside the prescaler operating range of a commercial PLL circuit.…”

Section: Introductionmentioning

confidence: 99%

Single-Chip 24-GHz Synthesizer for a Radar Application

Kozhuharov

Jirskog

Penndal³

et al. 2006

2006 IEEE Compound Semiconductor Integrated Circuit Symposium

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The design, implementation and testing of an MMIC 24 GHz synthesizer for radar distance sensor applications is presented. An oscillator is integrated on one chip together with a buffer amplifier, a power splitter and a receiver mixer. The chip is fabricated in GaAs mHEMT technology and has an area of 3.8x2 mm. The VCO is a varactor-tuned push-push oscillator with a tuning range of 1.4 GHz at 24 GHz. The measured output power at the transmitter output of the chip is 10 dBm and the measured phase noise is -98 dBc/Hz at 1 MHz offset frequency. The chip also provides half the LO frequency to a PLL circuit.

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Low cost GaAs PHEMT MMICs for millimeter wave sensor applications

Cited by 8 publications

References 4 publications

A compact W‐band mixer‐first receiver in 65 nm CMOS

A compact W‐band mixer‐first receiver in 65 nm CMOS

A 19GHz DRO downconverter MMIC for 77GHz automotive radar frontends in a SiGe bipolar production technology

Single-Chip 24-GHz Synthesizer for a Radar Application

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