Direct parameter extraction method for deep submicrometer metal oxide semiconductor field effect transistor small signal equivalent circuit

Gao, Jianjun; Werthof, A.

doi:10.1049/iet-map.2008.0162

Cited by 22 publications

(25 citation statements)

References 13 publications

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“…Therefore, the presented analysis can be beneficial to the power amplifier designs in the breakdown region. [1,2] In addition, different from the black-box behavioral model, the obtained equivalent circuit model is useful for the optimization of the device design [18][19][20] and helps us understand device physics [21][22][23] under large-signal operation. Besides, the presented inductive breakdown network can be applicable to other transistors in the presence of RF inductive breakdown.…”

Section: Journal Of Electromagnetic Waves and Applications 1871mentioning

confidence: 99%

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

Lee

Lin

2015

Journal of Electromagnetic Waves and Applications

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In this paper, large-signal output characteristics of the metal-oxide-semiconductor field-effect transistors in the breakdown region are investigated using X-parameter measurements for the first time. Magnitude of X T 2121 coefficients can be larger than the result of X s 2121 coefficients at high input power as drain voltage increases to the breakdown region. The output impedance X z 2121 under large-signal drive incorporating with the X s 2121 and X T 2121 coefficients is derived and then employed to investigate output matching in the breakdown region and at high input power, which is significant for power amplifier designs. Compared with the conventional hot-Z 2121 without X T 2121 coefficients considered, X z 2121 can be more accurate for the output impedance characterization. The presented analysis based on the X-parameters can be beneficial to output matching at high input power for power amplifier designs in the breakdown region.

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Section: Journal Of Electromagnetic Waves and Applications 1871mentioning

confidence: 99%

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

Lee

Lin

2015

Journal of Electromagnetic Waves and Applications

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“…To ensure the accuracy of the extracted parameters, the rational function non-linear fitting technique is used to best fit (4) through (6) to the corresponding de-embedded small-signal measurement data across the whole frequency range. In this work, the commercially available mathematical software Matlab is used for the rational function fitting extraction.…”

Section: Parameter Extractionmentioning

confidence: 99%

“…The method in [3], [4], and [5] extracting parasitic resistances in strong inversion( , 0) neglects the dependence of drain resistance on drain-source voltage, which does not apply to LDMOSFET. [6] proposed a method to extract extrinsic resistances at middle frequency and capacitances at low frequency, respectively, which requires quite broad measurement frequency range.…”

Section: Introductionmentioning

confidence: 99%

An accurate parameter extraction method for RF LDMOSFET small-signal model

Song

Wang

et al. 2015

2015 IEEE International Wireless Symposium (IWS 2015)

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A new direct parameter extraction method of small-signal equivalent circuit for radio frequency laterallydiffused Metal Oxide Semiconductor Field Effect Transistor (RF LDMOSFET) with Faraday shield biased in cut-off operation is presented in this paper. A series of analytical equations are derived for non-linear rational function fitting as well as linear regression to measured device frequency response characteristics. The method is successfully applied to a set of fabricated RF LDMOSFETs with different geometry scales. As a result, all of the cut-off small-signal equivalent circuit elements are determined. Validation of the extraction method is verified by good agreement between the simulation results and the corresponding measurement data. In addition, reasonable physical meaningfulness of the method is further demonstrated by characterizing the device geometrical dependences of the extracted gate-drain capacitance ( ) and drain-source capacitance ( ).

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“…The another extrinsic resistances R g , R d , R s and substrate network R sub and C jd can be analytically determined [21,22].…”

Section: Equivalent Circuit Modelmentioning

confidence: 99%

An Ann-Based Small-Signal Equivalent Circuit Model for Mosfet Device

Li¹,

Li²,

Quan³

2012

PIER

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Direct parameter extraction method for deep submicrometer metal oxide semiconductor field effect transistor small signal equivalent circuit

Cited by 22 publications

References 13 publications

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

An accurate parameter extraction method for RF LDMOSFET small-signal model

An Ann-Based Small-Signal Equivalent Circuit Model for Mosfet Device

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