A mixed-signal approach for high-speed fully controlled multidimensional load-pull parameters sweep

Squillante, Michele; Marchetti, Mauro; Spirito, M.; Vreede, L.C.N. de

doi:10.1109/arftg.2009.5278074

Cited by 12 publications

(5 citation statements)

References 6 publications

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“…When demanding the data acquisition to take place exactly for the user defined power levels and loading conditions, optimization of the injections signals needs to takes place. In the later operation mode an effective measurement speed of -1000 measurement points per minute can be reached, while fully controlling the input power level, the source and load impedances at the baseband, fundamental and harmonic(s) [13]. A typical example of the resulting output data is given in Fig.…”

Section: Mixed Signal Based Load-pullmentioning

confidence: 98%

“…The system capability allows mimicking of "real" matching networks using their measured or simulated frequency response and enables active devices to be evaluated for their actual incircuit behavior, even while being on wafer. Moreover the proposed setup provides an incredible measurement speed [13], while its unique feature of handling realistic wideband communication signals like multi-carrier W-CDMA, makes the setup perfectly suited for studying device performance in terms of efficiency, linearity and memory effects. However, when working with signals that have a high crest factor (e.g.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques

Vreede

Pelk

Neo

et al. 2010

2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)

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Section: Mixed Signal Based Load-pullmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques

Vreede

Pelk

Neo

et al. 2010

2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)

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“…The load-pull measurements were performed on three randomly selected HEMTs on each epi-structure with L g of 70 nm and L GD of 1 μm at 28 GHz in an active load-pull system (MT2000) by Anteverta Maury. [35,36] The HEMTs were biased (unpulsed) at an I DSQ ¼ 100 mA mm À1 (class-AB). The power sweeps were performed both under continuous wave (CW) and pulsed conditions.…”

Section: High-frequency Large Signal Performancementioning

confidence: 99%

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Chen¹,

Wen²,

Thorsell

et al. 2022

Physica Status Solidi (a)

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The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT) heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free AlN nucleation layer is studied. This is the first time demonstration of a buffer‐free epi‐structure grown with metal–organic chemical vapor deposition with thin GaN channel thicknesses, ranging from 250 to 150 nm, without any degradation of the structural quality and 2DEG properties. The HEMTs with a gate length of 70 nm exhibit good DC characteristics with peak transconductances of 500 mS mm−1 and maximum saturated drain currents above 1 A mm−1. A thinner GaN channel layer improves 2DEG confinement because of the enhanced effectiveness of the AlN nucleation layer acting as a back‐barrier. An excellent drain‐induced barrier lowering of only 20 mV V−1 at a VDS of 25 V and an outstanding critical electric field of 0.95 MV cm−1 are demonstrated. Good large‐signal performance at 28 GHz with output power levels of 2.0 and 3.2 W mm−1 and associated power‐added efficiencies of 56% and 40% are obtained at a VDS of 15 and 25 V, respectively. These results demonstrate the potential of sub‐100 nm gate length HEMTs on a buffer‐free GaN‐on‐SiC heterostructure.

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“…Therefore, a new set of model coefficients can be generated using a Least Mean Squares (LMS) algorithm [6], illustrated in eqs. (2)…”

Section: Including Gate Bias Voltage Sweep In the Cardiff Modelmentioning

confidence: 99%

“…Due to trade-offs between different design parameters (e.g. efficiency and linearity) the design of complex PA structures necessitates multidimensional characterisation data [1], [2]. A designer might need to vary several variables at the same time to be able to analyse the nonlinear behaviour of the active device and find the best compromise to meet all the design specifications.…”

Section: Introductionmentioning

confidence: 99%

Gate Bias Incorporation into Cardiff Behavioural Modelling Formulation

Azad

Bell

Quaglia

et al. 2020

2020 IEEE/MTT-S International Microwave Symposium (IMS)

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This paper presents a novel approach to incorporate gate bias voltage variations into the Cardiff behavioural model formulation. In particular, it is observed that the model coefficients can be expressed effectively as a linear function of bias voltage. As a result, the intensity of the load-pull measurement can decrease up to 80 % as the interpolation of the data with respect to the gate bias voltage can be exploited. The experiment was done on a 4 W GaN technology on-wafer device and the result is verified on 0.2 W GaAs technology device.

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A mixed-signal approach for high-speed fully controlled multidimensional load-pull parameters sweep

Cited by 12 publications

References 6 publications

Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques

Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Gate Bias Incorporation into Cardiff Behavioural Modelling Formulation

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