A model for atomic mixing

Wadsworth, M.; Armour, D.G.; Badheka, R.; Collins, R.

doi:10.1002/jnm.1660030210

Cited by 18 publications

(5 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The substitution of into equation (2) gives The integral in equation (4) can be determined and hence γ can be computed from the other known quantities. A similar substitution for the third species gives a similar equation to (4). In this case a value for can be obtained.…”

Section: If the Total Dose Is ф Thenmentioning

confidence: 87%

“…The application of the operator K to a general function f * to return a function g * is termed the forward operation. The problem of simulating the forward operation has been of interest for some time [1][2][3][4]. A computational simulation based on this model, known as IMPETUS, has also been developed.…”

Section: Statement Of the Quantification Problem In Operator Notationmentioning

confidence: 99%

“…The forward operator K is modelled using a fluid flow-like model for the atom mixing [2][3][4], which is summarised in this section. Let the material system consist of n pure material species.…”

Section: The Mathematical and Computational Model For Atomic Mixingmentioning

confidence: 99%

“…f (1) , f (4) are compared to the original f (the germanium concentration) in figure 6. After about four iterates there is little appreciable changes in the iterated solutions.…”

Section: Test On the Si And Ge Profilesmentioning

confidence: 99%

See 3 more Smart Citations

The inverse solution of the atomic mixing equations by an operator-splitting method

Kirkup

Yazdani

Aspey

et al. 2014

Applied Mathematical Modelling

View full text Add to dashboard Cite

The quantification problem of recovering the original material distribution from secondary ion mass spectrometry (SIMS) data is considered in this paper. It is an inverse problem, is ill-posed and hence it requires a special technique for its solution. The quantification problem is essentially an inverse diffusion or (classically) a backward heat conduction problem. In this paper an operator-splitting method (that is proposed in a previous paper by the first author for the solution of inverse diffusion problems) is developed for the solution of the problem of recovering the original structure from the SIMS data. A detailed development of the quantification method is given and it is applied to typical data to demonstrate its effectiveness.

show abstract

Section: If the Total Dose Is ф Thenmentioning

confidence: 87%

Section: Statement Of the Quantification Problem In Operator Notationmentioning

confidence: 99%

Section: The Mathematical and Computational Model For Atomic Mixingmentioning

confidence: 99%

“…f (1) , f (4) are compared to the original f (the germanium concentration) in figure 6. After about four iterates there is little appreciable changes in the iterated solutions.…”

Section: Test On the Si And Ge Profilesmentioning

confidence: 99%

See 2 more Smart Citations

The inverse solution of the atomic mixing equations by an operator-splitting method

Kirkup

Yazdani

Aspey

et al. 2014

Applied Mathematical Modelling

View full text Add to dashboard Cite

show abstract

“…3. The simulation code IMPETUS [3] which takes into account cascade diffUsion, sputtering, backscattering and the collective redistribution associated with penetration and entrapment of the incident species and relocation of matrix atoms was used to obtain the simulated profile from the assumed initial distribution. The ability to accurately model the build up of the Si02 layer and the more rapid dif3ksion of B in the oxide than in the Si substrate itself is an essential feature of the model.…”

Section: Resultsmentioning

confidence: 99%

Range and damage distributions in ultra-low energy boron implantation into silicon

Hatzopoulos

Suder

Berg

et al.

Proceedings of 11th International Conference on Ion Implantation Technology

View full text Add to dashboard Cite

An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B/sup +/ ions implanted at normal incidence into Si(100) samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm/sup 2/ with and without a surface oxide layer and those implanted at 1 keV and below were capped with a nominal 20 nm layer of /sup 28/Si by ion beam deposition in situ in order to produce an oxygen equilibration layer for subsequent secondary ion mass spectrometry depth profiling. The samples were analysed using secondary ion mass spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, spreading resistance profiling and high resolution, cross section transmission electron microscopy to obtain the range and damage distributions and junction depths. The general observations were that channelling occurs at all energies studied, and that the relationship between the damage and range distributions depends strongly on bombardment energy. Comparison of the range and damage profiles was carried out to ascertain the role of the surface in determining the behaviour of defects produced very close to it by the low energy implants required for the production of junctions at depths in the 20 to 50 nm range. The role of the surface or silicon/silicon dioxide interface as a defect sink significantly influences the B redistribution behaviour during rapid thermal annealing

show abstract