A model for epitaxial lateral overgrowth of GaAs by liquid-phase electroepitaxy

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The article presents a short review of recent developments in epitaxial lateral overgrowth (ELO) of thin layers of III-V compound semiconductors by liquid phase epitaxy (LPE) and also by liquid phase electroepitaxy (LPEE). The focus is on the relative contributions of various transport processes involved in ELO toward the growth of high quality, dislocation free thin layers of semiconductors with large width/thickness ratios. Results of our experimental and modelling studies on lateral overgrowth by LPE are used as examples. Furthermore, the application of LPEE for lateral overgrowth of compound semiconductors, a new emerging area of ELO technology, is discussed, and some experimental and numerical results are presented.

Section: Elo Growth By Liquid Phase Electroepitaxymentioning

confidence: 99%

Recent progress in lateral overgrowth of semiconductor structures from the liquid phase

Żytkiewicz

Dobosz

Liu

et al. 2005

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“…However, even such cases, a care must be taken, and the physical phenomena must be examined on physical grounds whether such a simplification can be made. In some crystal processes such as lateral overgrowth of semiconductors, even the growth velocity may be small, the contribution of interface curvature to the growth process may be significant [4][5][6].…”

Section: Discussionmentioning

confidence: 99%

“…In the case of an applied electric current, for instance in electroepitaxy, the contribution of electrotransport to the growth rate will be included (see [6,9]). Similarly, the contributions of surface kinetics and interface curvature can also be included in the species mass balance at the interface [6]. In addition, the interfacial concentrations must also be updated through the satisfaction of the phase diagram equation(s) [9].…”

Section: Discussionmentioning

confidence: 99%

“…Similarly, the effect of surface tension on growth rate in crystal growth is included through its incorporation into concentration [4]. The contribution of surface tension may also be incorporated into growth rate by modifying the mass transport equation writing the jump condition for the species mass balance on a surface of discontinuity (interface) [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Incorporation of surface tension to interface energy balance in crystal growth

Yıldız¹,

Dost²

2007

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Effect of surface tension across a growth interface is known as the Gibbs-Thomson effect, and the associated energy balance is widely referred to as the Stefan condition in the literature, which is derived from thermodynamics. In this article, the interface energy balance that accounts for the effect of surface tension is derived by writing the jump condition for the energy balance on a surface of discontinuity which represents in crystal growth the evolving growth interface (solidification front) between the liquid and solid phases. To the best of our knowledge, the derivation of energy balance by writing jump conditions on a surface of discontinuity (interface) is new.

“…It is also worth mentioning that application of electrically conductive masks gives additional degree of freedom in controlling the shape of ELO layers. In particular, this goal can be achieved if growth is driven by passing an electric current through the mask/substrate interface at constant temperature (liquid phase electroepitaxy -LPEE) instead of cooling of the melt/substrate system, which is a common practice in LPE [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Properties of ZrN films as substrate masks in liquid phase epitaxial lateral overgrowth of compound semiconductors

Dobosz

Gołaszewska

Żytkiewicz

et al. 2005

The usefulness of ZrN films as masks for epitaxial lateral overgrowth of GaAs and GaSb by liquid phase epitaxy is studied. It was observed that during the growth process ZrN masks are mechanically stable, they adhere strongly to the substrate and do not show any signs of degradation even at the growth temperature as high as 750°C. Moreover, perfect selectivity of GaAs and GaSb epitaxy was obtained on ZrN masked substrates ensuring the growth wide and thin layers. To study the influence of growth conditions on electrical resistivity of the mask, ZrN films deposited on GaAs substrates were annealed in various atmospheres. It was found that at temperatures higher than about 580°C the ZrN masks become highly resistive when heat-treated in hydrogen flow employed during growth. Usually, LPE growth temperature for GaAs is higher. Thus, ELO growth of GaAs by LPE becomes more difficult, though still possible, if ZrN masks are to be applied as buried electrical contacts. For GaSb ELO layers however, typical LPE growth temperature is about 480°C. This allows us to grow high quality GaSb ELO layers by LPE still preserving high electrical conductivity of ZrN mask.