2007
DOI: 10.1002/crat.200710927
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Incorporation of surface tension to interface energy balance in crystal growth

Abstract: Effect of surface tension across a growth interface is known as the Gibbs-Thomson effect, and the associated energy balance is widely referred to as the Stefan condition in the literature, which is derived from thermodynamics. In this article, the interface energy balance that accounts for the effect of surface tension is derived by writing the jump condition for the energy balance on a surface of discontinuity which represents in crystal growth the evolving growth interface (solidification front) between the … Show more

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Cited by 4 publications
(3 citation statements)
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“…This property may be one of important factors to induce the structural transition of self-assembled microtubes into nanofibers, considering interface energy minimization that is related to surface tension in the self-assembly process. 21 However, this proposition needs further study and substantiation.…”
mentioning
confidence: 98%
“…This property may be one of important factors to induce the structural transition of self-assembled microtubes into nanofibers, considering interface energy minimization that is related to surface tension in the self-assembly process. 21 However, this proposition needs further study and substantiation.…”
mentioning
confidence: 98%
“…8) It is the foundation of studying the interface dynamics. 9) In solidification phenomena, surface tension plays important roles in optimizing and simulating the crystal growth parameters, 10) forecasting the degree of the modification, 11) porosity formation, 12) mould filling capacity and surface roughness. 13,14) In the present study, experimental analysis has shown that a relationship between the surface tension of cast iron and the graphite shape does occur.…”
Section: Introductionmentioning
confidence: 99%
“…However, LPEE and THM need single crystal seeds of the same composition of the crystal to be grown. In order to address this issue, the MCZM technique was utilized for the growth of Si x Ge 1-x crystals and the growth technique was called "Liquid Phase Diffusion" (LPD) (22)(23)(24)(25)(26)(27). These studies have been carried out with two objectives in mind.…”
Section: Introductionmentioning
confidence: 99%