A model of clustering of phosphorus atoms in silicon

Velichko, O. I.; Dobrushkin, Vladimir A.; Pakula, Lewis

doi:10.1016/j.mseb.2005.06.014

Cited by 12 publications

(11 citation statements)

References 22 publications

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“…Although a mechanism of such a saturation of the electron density in silicon heavily doped by Sb is different from that in As-doped silicon, 10 the idea of the limited electron density due to compensation by the acceptors is a very fruitful one. For example, it has been supposed in 54 that phosphorus clusters are negatively charged. Due to this assumption, saturation of the electron density during high concentration phosphorus diffusion was explained.…”

Section: Modelmentioning

confidence: 99%

Mechanisms of arsenic clustering in silicon

et al. 2006

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A model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms incorporated into the clusters are calculated as functions of the total arsenic concentration. A number of the negatively charged clusters incorporating a point defect and one or more arsenic atoms are investigated. It is shown that for the doubly negatively charged clusters or for clusters incorporating more than one arsenic atom the electron density reaches a maximum value and then monotonically and slowly decreases as total arsenic concentration increases. In the case of doubly negatively charged cluster incorporating two arsenic atoms, the calculated electron density agrees well with the experimental data. Agreement with the experiment confirms the conclusion that two arsenic atoms participate in the cluster formation. Among all present models, the proposed model of clustering by formation of doubly negatively charged cluster incorporating two arsenic atoms gives the best fit to the experimental data and can be used in simulation of high concentration arsenic diffusion.Comment: 13 pages, 4 figures. Revised and shortened version of the paper has been published in Phys. Rev. B, Vol.74 (3), art. no. 035205 (2006

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Section: Modelmentioning

confidence: 99%

Mechanisms of arsenic clustering in silicon

et al. 2006

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“…For example, such generation may occur when phosphorus atoms are built into the crystal lattice of silicon, as has been assumed in [6]. Furthermore, at a high concentration of the impurity, precipitates of silicon phosphoride SiP [29] or clusters of phosphorus atoms are formed [30]. The occurring quasichemical reactions may be accompanied by the generation of silicon interstitials.…”

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confidence: 99%

Modeling high-concentration phosphorus diffusion in crystalline silicon

Velichko

Aksenov

Anufriev

et al. 2013

J Eng Phys Thermophy

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Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840 o C and a duration of 10 min has been modeled. Good agreement with experimental data has been obtained, which confi rms the adequacy of the employed model of high-concentration phosphorus diffusion. This model takes account of the drift of self-interstitials in the fi eld of internal elastic stresses.

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“…For comprehensive modeling high-concentration phosphorus diffusion with a quantitative description of the "plateau", characterized by a constant electron density, it is necessary to combine the model of phosphorus diffusion [9,13] with the model of the formation of negatively charged phosphorus clusters [16]. It means that a set of equations describing high-concentration phosphorus diffusion, namely: (i) equation of diffusion of phosphorus atoms [9,13]; (ii) approximation of local charge neutrality [16] for the concentration of electrons normalized to the concentration of intrinsic charge carriers n i ; (iii) equation of vacancy diffusion, [9,13] and (iv) equation of the diffusion of silicon self-interstitials [9,13] must be combined with the equation describing cluster formation [16]…”

Section: Modelmentioning

confidence: 99%

A comprehensive model of high-concentration phosphorus diffusion in silicon

Velichko¹

2019

Preprint

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A comprehensive model of high-concentration phosphorus diffusion has been developed and simulation of phosphorus diffusion from a constant source (phosphosilicate glass) at a temperature of 890 • C for 14.25 min has been carried out. Such doping processes are widely used in manufacturing modern solar cells. The proposed model combines the ideas of the drift of silicon self-interstitials in the field of elastic stresses with the concept of the formation of negatively charge clusters of impurity atoms. The calculated phosphorus concentration profile is in good agreement with the experimental one.

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A model of clustering of phosphorus atoms in silicon

Cited by 12 publications

References 22 publications

Mechanisms of arsenic clustering in silicon

Mechanisms of arsenic clustering in silicon

Modeling high-concentration phosphorus diffusion in crystalline silicon

A comprehensive model of high-concentration phosphorus diffusion in silicon

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