A modified forward <i>I</i>-<i>V</i> plot for Schottky diodes with high series resistance

Norde, Herman

doi:10.1063/1.325607

Cited by 1,369 publications

(515 citation statements)

References 1 publication

Supporting

Mentioning

482

Contrasting

Unclassified

Order By: Relevance

“…The stable temperature dependent electrical characteristics showed both two type of DC magnetron sputtered contacts showed excellent performance. The theoritical approaches of Chand and Bala and Oswald and Horwath were proved experimentally by the characteristics of p-type and n-type InP Schottky contact characteristics [8,10]. This result is supported by Norde calculations.…”

Section: Resultssupporting

confidence: 70%

Semiconductor Type Dependent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20–400 K

Korkut

2013

Nano-Micro Lett.

View full text Add to dashboard Cite

Abstract:The paper describes how electrical properties of Pt/InP Schottky diode were affected by semiconductor type. We fabricated Pt/p-InP and Pt/n-InP Schottky diodes and measured electrical characteristics from 20 K to 400 K. Thicknesses of less than 30 nm of platinum were deposited on the two types of indium phosphide substrates using magnetron sputtering technique after the creation of Zn-Au ohmic back contact. We discussed basic diode parameters of idealiy factors, barrier heights and serries resistances of the two type of contacts. Additionly, unusual temperature characteristics of the the diodes were highlighted. These results were evaluated in terms of semiconductor type comparision of Pt/InP Schottky structures.

show abstract

Section: Resultssupporting

confidence: 70%

Semiconductor Type Dependent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20–400 K

Korkut

2013

Nano-Micro Lett.

View full text Add to dashboard Cite

show abstract

“…This dependence will make an error into accuracy of determining the ideality factor and, therefore, the barrier height, which is substantially greater than the error introduced by the measurement inaccuracy. Typical local maximum n for low voltages and increase of the ideality factor with the voltage at high voltages were observed by several authors [3,7,21,22].…”

Section: Calculation Of Barrier Parameters From Current-voltage Charamentioning

confidence: 90%

“…The Norde method [7] was developed for the ideality factor close to unity for the cases when the effect of series resistance on the current-voltage characteristics introduces a significant error in determination of the barrier height by using the simpler methods. For correct description of the current-voltage characteristics at V > 3kT/q, the formula (1) must be modified to the form…”

Section: Calculation Of Barrier Parameters From Current-voltage Charamentioning

confidence: 99%

“…A number of methods for their determination, including determination from the current-voltage characteristic, is well known [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Attempts to generalize and systematize the existing methods were made in a number of papers [1][2][3][4], but estimation of accuracy, carried out in the most of works, does not take into account the peculiarities of contacts to wide-gap semiconductors.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

Ya¹,

Lashkaryov²

2014

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au-TiB 2 -n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the series resistance in calculating the ideality factor and barrier height has been shown with the Cheung method and direct approximation one. It has been ascertained that an inconsistency between real currentvoltage characteristics and its model -the temperature dependence of the barrier height, the ideality factor dependence on the voltage -introduces the basic error into the calculated parameters in the diode under study.

show abstract

“…The nonideality of a real contact is characterized by the ideality factor, n. Also, the presence of series resistance, R s , from the bulk semiconductor below the depletion region and back side ohmic contact resistance, will decrease the practical potential drop across the metal-semiconductor contact. Using Norde's method, 13 the series resistance is determined to be 200± 30 ⍀. The modified I -V characteristic with the inclusion of series resistance is then given by: 14,15 …”

mentioning

confidence: 99%

Improved characteristics for Au∕n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation

Liu

Saulys

Kuech

2004

Applied Physics Letters

View full text Add to dashboard Cite

The influence of nonaqueous sulfide passivation (using Na 2 S in the inert solvent benzene) on Au/ n-GaSb Schottky junction behavior was studied. The junction parameters, Schottky barrier height and ideality factor, were derived and compared with those of as-received GaSb surfaces as well as surfaces treated with aqueous sulfide solutions. The Schottky junction made on as-received GaSb is highly nonideal, while S-based passivation treatment of the GaSb surface before contact formation improves the rectifying behavior, and markedly reduces the reverse current. A benzene-based nonaqueous sulfide treatment results in GaSb surfaces with lower oxide and elemental antimony content than does the aqueous sulfide treatment. The produced Schottky barrier height increases to 0.61 eV and the Au/ n-GaSb contact is close to an ideal Schottky junction. GaSb is an important III-V compound semiconductor for high-speed and optoelectronic devices operating in the infrared and near-infrared region. 1 Due to its small band gap, there is often difficulty in achieving a high-quality metalGaSb Schottky contact with near-ideal current-voltage ͑I -V͒ characteristics. Surface and interface properties are critical in determining metal-semiconductor contact behavior, and the existence of an interfacial layer, or a high density of defect states at the metal and semiconductor interface, can lead to highly nonideal characteristics. Air oxidation of GaSb at room temperature results in a thick overlayer of native oxide and a high concentration of elemental antimony at the oxideGaSb interface. [2][3][4] The presence of elemental Sb at the surface can lead to device degradation. Due to its metallic nature, Sb can increase the surface leakage current and lead to the generation of gap-region surface states, reducing the minority carrier lifetime and limiting device performance. Surface passivation using sulfide-based solutions can effectively remove the native oxide and improve the surface electronic and electrical properties. [5][6][7] Previous studies of the sulfurbased passivation using a ͑NH 4 ͒ 2 S-water solution have shown improved Schottky characteristics with a Au-GaSb barrier of 0.52-0.57 eV being reported. 8,9 The use of an aqueous process however, with and without S passivation, leads to a variety of results in the formation of a Au-GaSb Schottky diode with a wide range of the barrier height values being reported, even exceeding the band-gap energy. 10 Further improvements in the reproducibility and stability of the Au-GaSb diodes require a thorough removal of surface oxides and elemental Sb which entails a nonaqueous environment. Nonaqueous passivation using an inert solvent, such as benzene, as the sulfidization medium results in a GaSb surface with decreased amounts of oxide residue and elemental Sb content compared to that generated by aqueous sulfide treatment. 7 In this work, the impact of a nonaqueous S-based passivation treatment on the Au/ n-GaSb Schottky junction behavior was studied. In particular, a nonaqueous sulfide passivat...

show abstract

A modified forward I-V plot for Schottky diodes with high series resistance

Cited by 1,369 publications

References 1 publication

Semiconductor Type Dependent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20–400 K

Semiconductor Type Dependent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20–400 K

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics

Improved characteristics for Au∕n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation

Contact Info

Product

Resources

About