It is shown that by plotting the function F (V) =V/2−(kT/q)  ln(I/AA**T2) a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI-vs-V plot. A theoretical examination of F (V) is followed by experimental plots for some common Schottky-barrier diodes.

Some rare-earth elements, Tb, Er, Yb (including Y) and some of their respective silicides were found to make ohmic contacts to n-type silicon. Forward I/V and photoresponse measurements give values of about 0.7 eV for the Schottky-barrier height to p-type silicon. The sum of this value and of the experimentally estimated barrier height to n-type silicon, 0.4 eV, corresponds to the band gap of silicon.

High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor J. Appl. Phys. 85, 7931 (1999); 10.1063/1.370610New properties and applications of electronbeam evaporated silicon in submicron elevated source/drain metal oxidesemiconductor fieldeffect transistors

No abstract

Institute ql' Ph)tsit's, 75I 21 Uppsala, Sweden The nuclear resonance in the l6O(a, a)l6O elastic scattering reaction at 3.045 MeV has been used in concentration profile measurements ol oxygen in thin-film structuresThe concentration profile can be deduced lrom an energy scan ol the incoming a-particies, thus shifting the resonance to different depths in the sample. The methocl has been applie