Some rare-earth elements, Tb, Er, Yb (including Y) and some of their respective silicides were found to make ohmic contacts to n-type silicon. Forward I/V and photoresponse measurements give values of about 0.7 eV for the Schottky-barrier height to p-type silicon. The sum of this value and of the experimentally estimated barrier height to n-type silicon, 0.4 eV, corresponds to the band gap of silicon.

The formation of iridium silicides from the interaction of iridium films with single-crystal silicon substrates has been studied from 350 to 1000 °C. Three distinct phases, IrSi, IrSi1.75(?), and IrSi3, were identified. Different modes of formation were observed and investigated. IrSi and IrSi1.75 form in layers parallel to the substrate at temperatures from 350 to 900 °C. The growth of IrSi3 from nuclei that spread laterally occurs at about 1000 °C, where possible the kinetics were systematically studies.

The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Rh, RhSi, Rh4S5, and Rh3Si4 have been determined by means of photoresponse, capacitance, and forward current-voltage measurements. The results are compared to the results previously obtained with iridium, and with other plantinum related elements.

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Barrier heights between as-deposited (300 °C substrate temperature) Schottky contacts between Re and Os, and 〈100〉 n-Si have been measured, by photoelectric response and analysis of forward I-V data to 0.77 eV for Re, and 0.85 eV for Os. The trend of barrier heights for the 5d series elements, Hf-Ta-W-Re-Os-Ir-Pt-Au is discussed and compared with quantities which have been correlated with the value of the barrier height, viz. work function, electronegativity, and heat of formation for the appropriate silicide. The comparison gives some preference for the simple correlation with work function.