The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and <i>p</i>-type silicon

Norde, Herman; Pires, Jorge de Sousa; d’Heurle, F. M.; Pesavento, Francesco; Petersson, S.; Tove, PA

doi:10.1063/1.92201

Cited by 165 publications

(25 citation statements)

References 15 publications

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“…Depending on material combination and surface orientation, they both allow lattice matched isotropic growth, [8][9][10] or, as on Si͑100͒ surfaces, self-limiting and anisotropic growth as monolayer-thick nanowires [11][12][13][14] as well as adjustment of Schottky barriers. 15,16 2D and onedimensional ͑1D͒ plasmonics is a relatively new field, and only very few investigations have been carried out yet on the plasmons in such layers or wire structures. 4,17,18 Before turning our interest to anisotropic structures, we report here as a first step on the plasmonic excitations and their properties on an isotropic monolayer of DySi 2 on Si͑111͒.…”

Section: Introductionmentioning

confidence: 99%

Experimental investigation of two-dimensional plasmons in aDySi2monolayer on Si(111)

2008

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DySi 2 monolayers were prepared by thermal evaporation of Dy at room temperature followed by annealing to 500°C on Si͑111͒, which yields a perfect ͑1 ϫ 1͒ low-energy electron diffraction pattern. These monolayers of DySi 2 were investigated by electron energy loss spectroscopy with both high energy and momentum resolution. A low-energy acoustic-like dispersion was found with very small anisotropy in reciprocal space, consistent with the characteristic losses due to a two-dimensional plasmon in the hexagonal monolayer structure of DySi 2 , and effective hole densities of N 2d = 4.1ϫ 10 13 cm −2 with an effective mass of m ‫ء‬ = 0.37m e .Deviations of the expected dispersion due to single-particle excitations in the Si substrate were found above q ʈ = 0.08 Å −1 . On ͑111͒ facets with terrace widths of 12 lattice constants, these properties change little along the terraces, but no plasmon wave propagation across step edges is possible, leading to strong suppression of characteristic loss signals in the direction normal to the steps.

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Section: Introductionmentioning

confidence: 99%

Experimental investigation of two-dimensional plasmons in aDySi2monolayer on Si(111)

2008

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“…Due to its low resistivity (3.5 Â 10 À7 Om in bulk) and low schottky barrier height to Si [6,7], ErSi 2 nanowires grown on Si substrates have been studied extensively [1][2][3][4][5]8,9]. The lattice mismatch of the hexagonal type ErSi 2 in h0 0 0 1i direction (caxis) with Sih1 1 0i axis is 6.5%, and that between ErSi 2 h1 1 2 0i and Sih1 1 0i is À1.3%, respectively.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of very long ErSi2 nanowires on Si substrates

Harako

Kouno

Komuro³

et al. 2005

Journal of Crystal Growth

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“…[1][2][3] In addition, the excellent lattice match between the RE silicides of hexagonal AlB 2 structure and Si substrates offers an opportunity to grow high-quality epitaxial silicides on silicon. [4][5][6][7] Recently, RESi 2-x nanowires were grown on (001)Si.…”

Section: Introductionmentioning

confidence: 99%

Planar defects and double-domain epitaxy in epitaxial YSi2−x and ErSi2−x thin films on Si substrates

Tsai

Chi

Chen

2003

Journal of Elec Materi

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Interfacial reactions of Y and Er thin films on both (111)Si and (001)Si have been studied by transmission electron microscopy (TEM). Epitaxial rare-earth (RE) silicide films were grown on (111)Si. Planar defects, identified to be stacking faults on {1010} planes with 1/6<1213> displacement vectors, were formed as a result of the coalescence of epitaxial silicide islands. Double-domain epitaxy was found to form in RE silicides on (001)Si samples resulting from a large lattice mismatch along one direction and symmetry conditions at the silicide/(001)Si interfaces. The orientation relationships are [0001]RESi 2-x // [110]Si, (1100)RESi 2-x //(001)Si and [0001]RESi 2-x /[110]Si, (1100)RESi 2-x //(001) Si. The density of staking faults in (111) samples and the domain size in (001) samples were found to decrease and increase with annealing temperature, respectively.

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The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type silicon

Cited by 165 publications

References 15 publications

Experimental investigation of two-dimensional plasmons in aDySi2monolayer on Si(111)

Experimental investigation of two-dimensional plasmons in aDySi2monolayer on Si(111)

Synthesis of very long ErSi2 nanowires on Si substrates

Planar defects and double-domain epitaxy in epitaxial YSi2−x and ErSi2−x thin films on Si substrates

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