A Monolithic CMOS-MEMS Oscillator Based on an Ultra-Low-Power Ovenized Micromechanical Resonator

Li, Ming-Huang; Chen, Chao‐Yu; Li, Cheng-Syun; Chin, Chih‐Chien; Li, Sheng-Shian

doi:10.1109/jmems.2014.2331497

Cited by 73 publications

(37 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this work, we employ complementary metal oxide semiconductor (CMOS)-MEMS technology to fabricate a micromachined RF switch with low actuation voltage of 12 V, and its pull-in voltage is lower than that of Wang et al [4], Angira et al [5], Gao et al [6], Giffney et al [7], Yang et al [8], Park et al [9] and Zheng et al [10]. The use of commercial CMOS process to fabricate MEMS devices is called CMOS-MEMS technology [11][12][13][14]. Micro sensors and actuators manufactured by this technology usually require a post-CMOS process to add functional materials [15][16][17] or to release suspended structures [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

2015

View full text Add to dashboard Cite

Abstract:The study investigates the design and fabrication of a micromachined radio frequency (RF) capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS) technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW) lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM) software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

show abstract

Section: Introductionmentioning

confidence: 99%

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

2015

View full text Add to dashboard Cite

show abstract

“…Therefore, the phase noise spectrum is scaled by R m 2 if circuit noise remains constant. Fortunately, the input-referred noise of the TIA circuit designed in this work can be adjusted by means of a tunable feedback resistor [2]. Therefore a reasonable PN can be achieved even under extremely high R m , such as R m > 20MΩ.…”

Section: B Oscillator Phase Noisementioning

confidence: 96%

“…In particular, the recent advancement in CMOS-MEMS technologies demonstrates advantages over other solutions, including monolithic MEMScircuit integration, high fabrication yield, and harnessed process variations, so as to provide a cost-effective solution for single-chip oscillator designs [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…To further understand the phase noise behavior for CMOS-MEMS oscillators under different resonator dc-bias (V P ) and environmental pressure (P), the DETF CMOS-MEMS oscillator in [2] is again used to complete this study. In this work, the oscillator performance under various extreme conditions is reported.…”

Section: Introductionmentioning

confidence: 99%

“…The MEMS resonator is 136 μm long and 5 μm wide with a resonance frequency of 1.2 MHz. Due to the fabrication process limit, the equivalent in-plane capacitive transducer gap of 1 μm is used for the resonator [2]. Based on the capacitive resonator model [1], for a given resonator dimension and gap spacing, R m is inversely proportional to Q-factor (Q) and dc-bias (V P ), i.e.,…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of pressure and bias voltage on the phase noise of CMOS-MEMS oscillators

Chiu

Chen

et al. 2015

2015 Joint Conference of the IEEE International Frequency Control Symposium &Amp; The European Frequency and Time Forum

Self Cite

View full text Add to dashboard Cite

In this work, we present a comprehensive study on the effects of environmental pressure (P) and resonator dc-bias voltage for the phase noise of a monolithic CMOS-MEMS oscillator. In order to access the practical utility of CMOS-MEMS oscillators for versatile applications, a double-ended tuning fork (DETF) MEMS resonator oscillator is used as a case study. In the ambient pressure, the oscillation ensues at a minimum V P = 30V and shows a phase noise (PN) of -86 dBc/Hz at 1-kHz offset and -99 dBc/Hz at 1-MHz offset. On the other hand, a low-V P CMOS-MEMS oscillator with IC compatible voltage (i.e., V P = 3V, leading to an equivalent motional impedance R m of 100 MΩ) is also demonstrated in a vacuum chamber (P < 1 mTorr) with a PN of -94 dBc/Hz at 1-kHz offset and -98 dBc/Hz at 1-MHz offset, respectively.

show abstract

MEMS Using CMOS Wafer

Fang

Chiu

et al. 2021

3D and Circuit Integration of MEMS

View full text Add to dashboard Cite

A Monolithic CMOS-MEMS Oscillator Based on an Ultra-Low-Power Ovenized Micromechanical Resonator

Cited by 73 publications

References 36 publications

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Effects of pressure and bias voltage on the phase noise of CMOS-MEMS oscillators

MEMS Using CMOS Wafer

Contact Info

Product

Resources

About