A Monolithic High-Efficiency 2.4-GHz 20-dBm SiGe BiCMOS Envelope-Tracking OFDM Power Amplifier

Wang, Feipeng; Kimball, D.; Lie, Donald Y. C.; Asbeck, P.M.; Larson, L.E.

doi:10.1109/jssc.2007.897170

Cited by 195 publications

(71 citation statements)

References 38 publications

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“…11 and Table 3, which shows that the performance of PA keeps steady in 100 MHz bandwidth with fixed source and load impedance. At last, Table 4 lists the comparison of published works and this paper [12,[20][21][22]. As shown in Table 4, the performance of the fabricated SiGe PA is comparable to the GaAs PA, and its linearity is better than other SiGe PAs in the table.…”

Section: Design and Measurement Of Pamentioning

confidence: 99%

Design of 900 MHZ Sige Power Amplifier With Linearization Bias Circuit

Zhang¹,

Zhang²,

Fu³

et al. 2016

PIER C

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Abstract-A single stage 900 MHz power amplifier (PA) with linearization bias circuit is designed with HHNEC 0.5 µm BIS500G power SiGe BiCMOS process. It is implemented by single-ended common emitter structure as a class AB power amplifier. The adopted active bias circuit is originally explained by using two virtue current sources, so that the mechanism of the improvement of linearity can be described more clearly. Then the mechanism is applied to guide the design of a power amplifier with an active bias circuit, which shows better linearity than resistor biased power amplifier by simulation. Through further design and measurement, the fabricated single stage power amplifier exhibits output power 1 dB compression point (OP1 dB) of 18.9 dBm, with power added efficiency (PAE) of 26.75% and power gain of 20.9 dB under 3.3 V voltage supply.

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Section: Design and Measurement Of Pamentioning

confidence: 99%

Design of 900 MHZ Sige Power Amplifier With Linearization Bias Circuit

Zhang¹,

Zhang²,

Fu³

et al. 2016

PIER C

View full text Add to dashboard Cite

show abstract

“…1 [1], [2], [4], [5]. It contains a linear regulator and a DC/DC converter in master-slave configuration.…”

Section: Supply-modulator Architecturementioning

confidence: 99%

“…The linear regulator is formed by a Miller-compensated two-stage amplifier built with class-A input transconductor g in and class-AB output transconductor g o . A sensing resistor in the output branch of the linear regulator [2] would require a high common-mode rejection in the sensing amplifier. Instead, a scaled class-AB output stage g o,c is used to generate a control signal for the DC/DC converter.…”

Section: Supply-modulator Architecturementioning

confidence: 99%

“…To reduce system complexity, multi-mode building blocks that can handle various standards using a single circuit are attractive. Therefore, this paper focuses on a multi-mode hybrid supply modulator suitable for use in GSM, EDGE and UMTS modes, as opposed to the singlemode supply modulators reported earlier [1], [2]. As a result, the combination of possible UMTS application and polar modulation leads to a bandwidth target [3] of 50MHz for the supply modulator, which is higher than that of earlier results [1], [2].…”

Section: Introductionmentioning

confidence: 97%

“…Alternatively, linear regulators enable higher bandwidth at the cost of efficiency. As a good compromise between efficiency and bandwidth, hybrid supply modulators have been proposed combining a switched-mode DC/DC converter in parallel to a linear regulator [1], [2]. One reported hybrid supply modulator achieves 10MHz bandwidth for an EDGE polar transmitter [1], whereas another one achieves 20MHz bandwidth for a WLAN envelope-tracking PA [2].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A 50MHz bandwidth multi-mode PA supply modulator for GSM, EDGE and UMTS application

Blanken

Karadi

Bergveld

2008

2008 IEEE Radio Frequency Integrated Circuits Symposium

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-This paper describes the design and measurement results of a supply modulator for a PA for GSM, EDGE and UMTS application. The modulator combines a high-bandwidth class-AB linear regulator with an efficient DC/DC converter in a master-slave configuration. The DC/DC converter is currentmode controlled and has been designed to operate at switching frequencies between 1MHz and 25MHz. A damped dualinductor LCR filter has been inserted in the output branch of the DC/DC converter for ripple suppression. The chip has been fabricated in a 0.25µm CMOS process with an additional gate oxide for 6V transistors and has an active area of 1.5mm 2 . It achieves a bandwidth of 50MHz (for UMTS) with a peak output power of 3.2W (for GSM) and output rms ripple of less than 4mV.

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Envelope Tracking Techniques Applied to a Fully Monolithic Silicon‐BasedRFPower Amplifier System

Lie

Lopez

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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This article presents a detailed design example of applying envelope tracking (ET) techniques on a highly monolithic silicon‐based radio‐frequency (RF) power amplifier (PA) to form a high‐efficiency and low‐cost ET‐PA system. An envelope‐tracked SiGe cascode PA with an integrated complementary metal–oxide–semiconductor (CMOS) envelope modulator for mobile WiMAX and 3GPP long‐term evolution (LTE) transmitters (TXs) is shown in this work. The entire ET‐based RF PA system delivers the linear output power of 22.3/24.3 dBm with the overall power‐added efficiency (PAE) of 33%/42% at 2.4 GHz for the WiMAX 64QAM and the 3GPP LTE 16QAM modulations, respectively. Additionally, it exhibits a highly efficient broadband characteristic for multiband applications. Compared with the conventional fixed‐supply cascode PA, our ET‐based cascode PA meets the WiMAX/LTE spectral mask and error vector magnitude (EVM) spec at close to its P 1dB compression without the need for predistortion. The SiGe PA and the CMOS envelope modulator are both designed and fabricated in the TSMC 0.35‐μm SiGe bipolar CMOS (BiCMOS) process on the same die. This work represents an essential integration step toward achieving a fully monolithic ET‐based TX for wideband wireless applications.

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A Monolithic High-Efficiency 2.4-GHz 20-dBm SiGe BiCMOS Envelope-Tracking OFDM Power Amplifier

Cited by 195 publications

References 38 publications

Design of 900 MHZ Sige Power Amplifier With Linearization Bias Circuit

Design of 900 MHZ Sige Power Amplifier With Linearization Bias Circuit

A 50MHz bandwidth multi-mode PA supply modulator for GSM, EDGE and UMTS application

Envelope Tracking Techniques Applied to a Fully Monolithic Silicon‐BasedRFPower Amplifier System

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