A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation

Chain, Kenneth; Huang, Jian; Duster, J.S.; Ko, P.K.; Hu, Chenming

doi:10.1088/0268-1242/12/4/002

Cited by 62 publications

(31 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…A common approach to experimentally determine the dominant scattering mechanisms in two-dimensional systems is to extract the power-law exponent from the density dependence of the mobility. Several experimental and theoretical studies have used similar techniques to analyze disorder in GaAs/AlGaAs structures, [15][16][17][18][19][20][21] Si MOSFETs, 22 and doped 4,[23][24][25] and undoped [26][27][28] Si/SiGe heterostructures. With this in mind, we present in this work a systematic study of the depth dependence of scattering mechanisms in undoped shallow Si/SiGe quantum wells with channel depth ranging from 100 nm to only 10 nm away from the surface, the shallowest Si/SiGe device reported to date.…”

mentioning

confidence: 99%

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

et al. 2015

View full text Add to dashboard Cite

We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ∼ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ∼ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

show abstract

mentioning

confidence: 99%

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Figure 5 depicts a comparison of the change in the doping concentration-dependent DIBL coefficient with that of the electron energy-relaxation time at 300 K. It clearly illustrates that the two doping concentration-dependent relations are similar. The temperature- is dominant at high temperature [26]. This is because (12) can be rewritten as R =  e (T) 0 (T)F c /L eff .…”

Section: Resultsmentioning

confidence: 99%

Impact of Energy Relaxation of Channel Electrons on Drain-Induced Barrier Lowering in Nano-Scale Si-Based MOSFETs

Mao

2017

ETRI Journal

View full text Add to dashboard Cite

Drain‐induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short‐channel effect for nano metal‐oxide semiconductor field‐effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two‐dimensional approximations based on the energy‐conservation equation for channel electrons in FETs, which is different from the former field‐penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration‐dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.

show abstract

“…Electron mobility is dominated by Coulomb scattering at room temperature and low-electric-field region [13]. Moreover, interface charge inducing Coulomb scattering is in proportion to temperature as 1/μ int (T ) ∝ T [14]. Simultaneously, more ionized impurities in the gate resulting from increasing temperature will enhance remote Coulomb scattering.…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependence of Electron Mobility on Strained nMOSFETs Fabricated by Strain-Gate Engineering

Chang

Chao

2012

IEEE Electron Device Lett.

View full text Add to dashboard Cite

An effective electron mobility improvement that uses strain-proximity-free technique (SPFT) has been demonstrated using strain-gate engineering. The electron mobility of nMOSFETs with SPFT exhibits a 15% increase over that of counterpart techniques. The preamorphous layer (PAL) gate structure on the SPFT showed a further performance boost. The electron mobility exhibits a 52% improvement in nMOSFET using a combination of SPFT and PAL gate structure. Furthermore, the gain in electron mobility in the SPFT in combination with PAL gate structure decreases at high temperatures. Gate dielectric interface states and ionized gate impurities inducing carrier scattering will play important roles when operating devices under hightemperature conditions.

show abstract

A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation

Cited by 62 publications

References 9 publications

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

Impact of Energy Relaxation of Channel Electrons on Drain-Induced Barrier Lowering in Nano-Scale Si-Based MOSFETs

Temperature Dependence of Electron Mobility on Strained nMOSFETs Fabricated by Strain-Gate Engineering

Contact Info

Product

Resources

About