A near-infrared colloidal quantum dot imager with monolithically integrated readout circuitry

Liu, Jing; Liu, Peilin; Chen, Dengyang; Shi, Tailong; Qu, Xixi; Chen, Long; Wu, Tong; Ke, Jiangping; Xiong, Kao; Li, Mingyu; Song, Haisheng; Wei, Wei; Cao, Jun; Zhang, Jianbing; Gao, Liang; Tang, Jiang

doi:10.1038/s41928-022-00779-x

Cited by 145 publications

(170 citation statements)

References 43 publications

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“…Besides, the SPTr-QLED could visualize the high-contrast image obtained by SoN on-device preprocessing of acquired UV information. Meanwhile, for the scalable fabrication and commercialization of the SPTr-QLED, using Si complementary metal-oxide semiconductor fabrication technologies is important ( 52 ). However, there are still challenges relevant to the QLED fabrication including quantum dot patterning, material stability, and solvent orthogonality.…”

Section: Discussionmentioning

confidence: 99%

Integration of synaptic phototransistors and quantum dot light-emitting diodes for visualization and recognition of UV patterns

et al. 2022

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Synaptic photodetectors exhibit photon-triggered synaptic plasticity, which thus can improve the image recognition rate by enhancing the image contrast. However, still, the visualization and recognition of invisible ultraviolet (UV) patterns are challenging, owing to intense background noise. Here, inspired by all-or-none potentiation of synapse, we develop an integrated device of synaptic phototransistors (SPTrs) and quantum dot light-emitting diodes (QLEDs), facilitating noise reduction and visualization of UV patterns through on-device preprocessing. The SPTrs convert noisy UV inputs into a weighted photocurrent, which is applied to the QLEDs as a voltage input through an external current-voltage–converting circuit. The threshold switching characteristics of the QLEDs result in amplified current and visible illumination by the suprathreshold input voltage or nearly zero current and no visible illumination by the input voltage below the threshold. The preprocessing of image data with the SPTr-QLED can amplify the image contrast, which is helpful for high-accuracy image recognition.

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Section: Discussionmentioning

confidence: 99%

Integration of synaptic phototransistors and quantum dot light-emitting diodes for visualization and recognition of UV patterns

et al. 2022

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“…Nowadays, FPA ROICs have become a particularly useful choice in fabricating infrared imagers. Tang chose 640 × 512-pixel array ROICs to integrate PbS colloidal quantum dots (CQDs) and build an infrared imager [11]. Anthony et al designed a mid-wave infrared HgTe CQDs FPA detector [12].…”

Section: Characterization Of Focal Plane Area Imagersmentioning

confidence: 99%

CMOS-Compatible Optoelectronic Imagers

Liu²

2022

Coatings

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Silicon-based complementary metal oxide semiconductors have revolutionized the field of imaging, especially infrared imaging. Infrared focal plane array imagers are widely applied to night vision, haze imaging, food selection, semiconductor detection, and atmospheric pollutant detection. Over the past several decades, the CMOS integrated circuits modified by traditional bulk semiconductor materials as sensitivity sensors for optoelectronic imagers have been used for infrared imaging. However, traditional bulk semiconductor material-based infrared imagers are synthesized by complicated molecular beam epitaxy, and they are generally coupled with expensive flip-chip-integrated circuits. Hence, high costs and complicated fabrication processes limit the development and popularization of infrared imagers. Emerging materials, such as inorganic–organic metal halide perovskites, organic polymers, and colloidal quantum dots, have become the current focus point for preparing CMOS-compatible optoelectronic imagers, as they can effectively decrease costs. However, these emerging materials also have some problems in coupling with readout integrated circuits and uniformity, which can influence the quality of imagers. The method regarding coupling processes may become a key point for future research directions. In the current review, recent research progress on emerging materials for infrared imagers is summarized.

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“…Due to the limited size of the transferred graphene, the reported graphene-CQDs imagers showed a high dead pixel rate (~15%) with a low lling factor, a slow response time (~10 ms ), and inevitably large darkcurrent due to the high conductance of graphene channels. By using PbS CQDs photodiodes as sensing element, the darkcurent can be greatly reduced and demonstrated high-performance imaging in the near-infrared range (0.7-1.4µm) 22 .…”

Section: Introductionmentioning

confidence: 99%

Wafer-scale Fabrication of CMOS-compatible Trapping-mode Infrared Imagers with Colloidal Quantum Dots

Tang

Zhang

Bi³

et al. 2022

Preprint

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Silicon-based complementary metal-oxide-semiconductors (CMOS) devices have dominated the technological revolution in the past decades. With increasing demands in machine vision, autonomous driving, and artificial intelligence, Si-CMOS imagers, as the major optical information input devices, face great challenges in spectral sensing ranges. In this paper, we demonstrate the development of CMOS-compatible infrared colloidal quantum dots (CQDs) imagers in the broadband short-wave and mid-wave infrared ranges (SWIR and MWIR, 1.5-5µm). A new device architecture of trapping-mode detector is proposed, fabricated, and demonstrated with lowered dark currents and improved responsivity. The CMOS-compatible fabrication process is completed with two-step sequential spin-coating processes of intrinsic and doped HgTe CQDs on an 8-inch CMOS readout wafer with photoresponse non-uniformity (PRNU) down to 4%, dead pixel rate of 0%, external quantum efficiency up to 175%, and detectivity as high as 2×1011Jones for extended SWIR (cut-off wavelength=2.5µm) @ 300K and 8×1010Jones for MWIR (cut-off wavelength=5.5µm) @ 80K. Both SWIR images and MWIR thermal images are demonstrated with great potential for semiconductor inspection, chemical identification, and temperature monitoring.

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A near-infrared colloidal quantum dot imager with monolithically integrated readout circuitry

Cited by 145 publications

References 43 publications

Integration of synaptic phototransistors and quantum dot light-emitting diodes for visualization and recognition of UV patterns

Integration of synaptic phototransistors and quantum dot light-emitting diodes for visualization and recognition of UV patterns

CMOS-Compatible Optoelectronic Imagers

Wafer-scale Fabrication of CMOS-compatible Trapping-mode Infrared Imagers with Colloidal Quantum Dots

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