A Negative, Deep‐UV Resist for 248 nm Lithography

O'Toole, Michael M.; deGrandpre, Mark P.; Feely, Wayne E.

doi:10.1149/1.2095763

Cited by 7 publications

(7 citation statements)

References 2 publications

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“…At high doping levels NA (we dealt only with p-type silicon in this study), 9 decreases with increasing concentration due to Auger recombination processes according to VA = 1/(CANA2). A number of determinations of CA have been reported (3)(4)(5)(6)(7)(8)(9). Beck and Conradt's value Ca = 1.2 • 10 31 cm 6 s -~, determined in 1973 (3), agrees well with our observations.…”

Section: Discussionsupporting

confidence: 91%

“…values and used this knowledge to achieve ~ > 20 ms in lightly-Ga-doped, p-type, float-zoned (FZ) silicon. Figure 1 summarizes our results for T vs. NA and also presents results of some other recent investigations by Dziewior and Schmid (4), Passari and Susi (5), and Huber, Bachmeier, Wahlich, and Herzer (11). Figure 1 also shows ~A for CA = 1.2 x 10 -3' cm 6 s -1 (3) as well as CA = 1.2 x 10 -~~ cm 6 s-' and CA = 1.2 x i0 -~2 cm 6 s -I.…”

Section: Discussionsupporting

confidence: 56%

“…2. A DUV resist [ECX 1023 (5)] is then spin-coated on top of the antireflection layer to give a 0.5 ~m thick film. Since the ECX material is fairly absorbing at 248 nm, thinner films give better results.…”

Section: Resultsmentioning

confidence: 99%

“…In our selection of possible candidates for the bottom layer, only one showed sufficient sensitivity to be of practical value. This was ECX-1023 (Rohm and Haas/Shipley), a negative acting resist with a sensitivity of about 4 mJ/cm ~ to 248 nm radiation (5). A maximum film thickness of only 0.5 ~m could be used with this material because of its relatively high optical density.…”

Section: IIImentioning

confidence: 99%

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A Photochemical Image Enhancement Process

Hargreaves

O'Toole

Burriesci

1989

J. Electrochem. Soc.

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Section: Discussionsupporting

confidence: 91%

Section: Discussionsupporting

confidence: 56%

Section: Resultsmentioning

confidence: 99%

Section: IIImentioning

confidence: 99%

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A Photochemical Image Enhancement Process

Hargreaves

O'Toole

Burriesci

1989

J. Electrochem. Soc.

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“…The photosensitive polymer was formulated by mixing 2 with a cross-linker and a photoacid generator (PAG). We selected hexa(methoxymethyl)melamine (CYMEL) as a cross-linker because the aromatic rings of 2 can react with a carbocation formed from CYMEL 18 in the presence of an acid. On the other hand, PTMA 19 that has a strong absorption at 436 nm was used as a PAG (Scheme 2).…”

Section: Photosensitive Polymer Formulationmentioning

confidence: 99%

A Negative Type Photosensitive Polymer Based on Poly(naphthylene ether), a Cross-Linker, and a Photoacid Generator with Low Dielectric Constant

Tsuchiya

Shibasaki

Ueda

2007

Polym J

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ABSTRACT:A novel negative-working thermally stable photosensitive polymer based on poly(naphthylene ether), a cross-linker hexa(methoxymethyl)melamine, and a photoacid generator (5-propylsulfonyl-oxyimino-5H-thiophen-2-ylidene)-(2-methylphenyl)acetonitrile. Poly(naphthylene ether) was prepared via the oxidative coupling polymerization of 4,4 0 -bis(1-naphthyloxy)-2,2 0 -dimethylbiphenyl. This photosensitive polymer showed a high sensitivity (D 0:5 ) of 6.0 mJ cm À2 and a high contrast ( 0:5 ) of 5.2, when it was exposed to a 436 nm light, post-exposure baked at 140 C for 5 min, and developed with toluene.

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Photoreactions in halogen‐containing negative‐tone novolac resists

Lampe¹,

Reinhardt²,

Lorkowski³

et al. 1994

Angew. Makromol. Chem.

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The photolysis of halogenophenol novolacs is determined by the substitution of halogens by hydrogen and the formation of quinoid groups and intermolecular crosslinks. This is concluded from elemental analyses, NMR, IR and optical absorption measurements. The rate of halogen release depends on the chemical nature of the halogen. It increases in the order F < C1 < Br < I. Chlorine elimination from 4-position is favored over that from 2and 3-position. Moreover, dimers release chlorine from 4-position much more readily than trimers and tetramers. ESR measurements at 77 K and flash photolysis studies at 296 K yielded evidence for the intermediate existence of phenoxyl and aryl radicals. Lithographic tests demonstrated the high UV-sensitivity of resist formulations based on halogen-containing novolacs. The increase in sensitivity relative to that of formulations based on nonhalogenated novolacs is 6 to lOfold (system: 4-chlorophenol novolac/4,4'-bisazidobiphenyl (5%)) and ca. 25fold (system: 4-chlorophenol/m-cresol novolac/hexamethoxymethylmelamine (5%)). A postulated reactions mechanism concerning the sensitivity increase takes into account that halogen elimination results in the formation of additional radicals that accelerate the rate of crosslinking. Moreover, hydrogen halide generated by hydrogen abstraction of halogen radicals (Hal' + RH -+ H-Hal + R') provides for the acid required to catalyze the reaction of the melamine compound with the novolac matrix. ZUSAMMENFASSUNG:Elementaranalytische sowie NMR-, IR-und UV-spektroskopische Untersuchungen zeigen, daB die Photolyse von Halogenphenolnovolaken zur Substitution der Halogenatome durch Wasserstoff, der Bildung chinoider Gruppen und intermolekularen Vernetzung fuhrt. Die Geschwindigkeit der Halogeneliminierung hangt von der Art des Halogens ab. Sie steigt in der Reihenfolge F < C1 < Br < I. Die Chloreliminierung aus der 4-Position ist gegeniiber der aus der 2-und 3-Position begunstigt. AuBerdem verlauft die Abspaltung para-standiger Chloratome aus Dimeren schneller als aus Trioder Tetrameren. ESR-Messungen bei 77 K sowie die Laserblitzphotolyse bei 296 K 0 1994 Hiithig & Wepf Verlag, Base1 CCC 0o03-3146/94/$05.00 197 I. von Lampe, M. Reinhardt, H.-J. Lorkowski, W. Schnabel deuten auf die intermediare Bildung von Phenoxyl-und Arylradikalen. Lithographische Tests belegen die hohe UV-Empfindlichkeit von Resisten auf der Basis von Halogenphenolnovolaken. Im Vergleich zu nichthalogenhaltigen Novolakresisten wird eine 6 -lOfache (System: 4-Chlorphenolnovolak/4,4'-Bisazidobiphenyl(~~o)) bzw. eine ca. 25fache (System: 4-Chlorphenol-/m-Cresolnovolak/Hexamethoxymethylme~amin ( 5 % ) ) Steigerung der Empfindlichkeit erreicht. Zur Interpretation wird ein Mechanismus postuliert, demzufolge die durch Halogenabspaltung hervorgerufene Sekundarradikalbildung zu einer zusatzlichen Vernetzung beitragt. In den melaminhaltigen Resisten katalysiert der gebildete Halogenwasserstoff (Hal' + RH + H-Hal + R') aul3erdem die Reaktion der Melaminverbindung mit der Novolakmatrix.

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A Negative, Deep‐UV Resist for 248 nm Lithography

Abstract: not Available.

Cited by 7 publications

References 2 publications

A Photochemical Image Enhancement Process

A Photochemical Image Enhancement Process

A Negative Type Photosensitive Polymer Based on Poly(naphthylene ether), a Cross-Linker, and a Photoacid Generator with Low Dielectric Constant

Photoreactions in halogen‐containing negative‐tone novolac resists

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