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A novel, aqueous alkaline developable, sensitive electron beam resist is described. This resist is a three component system consisting of a novolak resin, aminoplast, and a radiation sensitive acid generator (RSAG). The resist has demonstrated high resolution (0.3 um grating in 0.5 um thick resist) with under 5uC /cm2 exposure dose. Furthermore, the resulting resist images exhibit dry etch stability comparable to optical positive novolak resists.This paper describes the chemistry of this novel resist system. The mechanism of the crosslinking reaction is discussed using data from GPC, FTIR and GCMS as analytical probes. The variation of sensitivity and contrast with resist composition has been analyzed as well.The paper addresses the nature of the post exposure 'dark reaction' in this resist and compares it to other electron beam resists (eg. COP) known to exhibit a strong time dependence on processing. Electrical linewidth studies and scanning electron microscopy data are employed in these studies.

Novolak resin-based positive electron-beam resist system utilizing acid-sensitive polymeric dissolution inhibitor with solubility reversal reactivity J. Vac. Sci. Technol. B 9, 3343 (1991); 10.1116/1.585339 High-resolution electron beam lithography with negative organic and inorganic resistsA novel novolak based negative working resist, developed by Rohm and Haas Company, has been investigated for use in direct-write electron-beam lithography. The resist has demonstrated 0.3 pm resolution at a dose of 4 pC/cmz. It displays high-dry etching resistance similar to that of conventional diazoquinone based positive resist. Results on the characterization of the resist and the development of a process are presented. In addition, the chemical properties and reaction mechanism of the resist are discussed briefly. The effects of post exposure-bake temperature and time on the resist image parameters, sensitivity, and resolution of the resist have been investigated. Exposure latitude and development latitude of the resist is discussed. Results of proximity effect correction using the GHOST method are presented.