Novolak resin-based positive electron-beam resist system utilizing acid-sensitive polymeric dissolution inhibitor with solubility reversal reactivity J. Vac. Sci. Technol. B 9, 3343 (1991); 10.1116/1.585339 High-resolution electron beam lithography with negative organic and inorganic resistsA novel novolak based negative working resist, developed by Rohm and Haas Company, has been investigated for use in direct-write electron-beam lithography. The resist has demonstrated 0.3 pm resolution at a dose of 4 pC/cmz. It displays high-dry etching resistance similar to that of conventional diazoquinone based positive resist. Results on the characterization of the resist and the development of a process are presented. In addition, the chemical properties and reaction mechanism of the resist are discussed briefly. The effects of post exposure-bake temperature and time on the resist image parameters, sensitivity, and resolution of the resist have been investigated. Exposure latitude and development latitude of the resist is discussed. Results of proximity effect correction using the GHOST method are presented.

The shelf life and film life of the electron beam resist, Microposit SAL601-ER7 from Shipley, were studied. Solutions and films of this resist were found to exhibit a performance degradation which is a function of the storage time and temperature. Refrigeration significantly improves the stability of the resist. Component studies were used to determine that the shelf life problem is due to an interaction between the novolak resin and melamine crosslinker. Results indicate that considerable stability can be realized by using less reactive crosslinkers in the resist formulation.