A new analytical threshold voltage model of cylindrical gate tunnel FET (CG-TFET)

Dash, Sidhartha; Mishra, Guru Prasad

doi:10.1016/j.spmi.2015.07.049

Cited by 54 publications

(41 citation statements)

References 27 publications

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“…The drain current of the proposed device can be determined using Kane's non‐local BTBT model as

I_{D} = q \int italicGdV = q \int E_{z} ((), \frac{A_{k} E_{g}}{italicqz}) e^{- ((), \frac{B_{k} qz}{E_{g}})} italicdV

…”

Section: Device Structure and Analytical Modelingmentioning

confidence: 99%

“…In recent times, cylindrical gate tunnel (CGT) field effect transistors (FETs) have attracted many researchers because of its steep subthreshold slope, low OFF‐state leakage current, and superior scaling capability . As a result of reduction in leakage current, CGT reduces power consumption considerably and thus makes it a suitable candidate to replace MOSFET for low‐power applications.…”

Section: Introductionmentioning

confidence: 99%

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Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

Dash

Lenka

Jena

et al. 2017

Int J Numerical Modelling

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The paper presents a cylindrical gate tunnel (CGT) field effect transistors (FETs) with a highly doped pocket layer introduced in the source region. The presence of pocket doped layer in the source provides higher lateral electric field and band‐to‐band tunneling (BTBT) generation rate in the vicinity of tunneling junction which in turn increases the drain current and transconductance significantly. Also, the linearity and radio frequency (RF) performance of the CGT FET with source pocket doping (CGTS) have been extensively investigated. The different linearity and RF figure of merits such as gmn, VIP2, VIP3, IIP3, ZCP, 1‐dB compression point, GBWP, TFP, unity gain cut‐off frequency, and maximum oscillation frequency of the present device are extracted and compared with the results of conventional CGT. The results exhibit superior linearity and RF performance along with improved current carrying capability of the proposed device. Thus, the device can be one of the possible contenders to replace bulk MOSFET in high‐frequency microwave applications. The accuracy of both the devices is validated by TCAD Sentaurus simulator.

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“…The drain current of the proposed device can be determined using Kane's non‐local BTBT model as

I_{D} = q \int italicGdV = q \int E_{z} ((), \frac{A_{k} E_{g}}{italicqz}) e^{- ((), \frac{B_{k} qz}{E_{g}})} italicdV

…”

Section: Device Structure and Analytical Modelingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

Dash

Lenka

Jena

et al. 2017

Int J Numerical Modelling

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“…Here ܸ is the built-in-potential, ܸ ௌ is the drain to source voltage, ܸ ௧ = The potential distribution ߮ ሺ‫,ݎ‬ ‫ݖ‬ሻ in the above three regions can be realized by 2-D Poisson's equation in the cylindrical coordinate system from the weak inversion to the onset of the strong inversion [24][25]. Here the the impurity density and Fermi levels are assumed to be uniform in the channel.…”

Section: Device Structure and Electrostatic Analysismentioning

confidence: 99%

“…work [24][25]. Here ‫ܧ‬ ௭ଷ ᇱ represents the electric field only in the channel, assuming negligible effect of source ‫ܮ(‬ ௦ = 0).…”

Section: A C C E P T E D Accepted Manuscriptmentioning

confidence: 99%

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A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-doping

Dash

Jena

Mishra

2016

Superlattices and Microstructures

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Z‐shaped gate TFET with horizontal pocket for improvement of electrostatic behavior

Sahoo

Dash

Routray

et al. 2020

Int J Numerical Modelling

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In this paper, a new Z-shaped gate TFET structure is proposed with an n+ horizontal pocket insertion beneath the source. The Z-TFET structure provides higher ON current by 2-decades as compared to conventional TFET due to the vertical tunneling and presence of HfO 2 gate oxide. Similarly, the ambipolar current reduces by 2-decades without affecting subthreshold swing (SS) and OFF current significantly. The ON current is further improved by positioning

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A new analytical threshold voltage model of cylindrical gate tunnel FET (CG-TFET)

Cited by 54 publications

References 27 publications

Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-doping

Z‐shaped gate TFET with horizontal pocket for improvement of electrostatic behavior

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