A new approach in impurity doping of 4H-SiC using silicidation

Tin, C. C.; Mendis, Suwan; Tin, Michelle T.; Isaacs-Smith, T.; Williams, John R.

doi:10.1063/1.4854816

Cited by 11 publications

(7 citation statements)

References 24 publications

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“…13 This means that also not additionally doped 4H-SiC was etched. These observations show that there are three interfaces of interest in Pt assisted photochemical etching of 4H-SiC which determine the performance of the etching process.…”

Section: Resultsmentioning

confidence: 99%

Communication—The Role of the Metal-Semiconductor Junction in Pt-Assisted Photochemical Etching of Silicon Carbide

Leitgeb¹,

Backes²,

Zellner³

et al. 2015

ECS J. Solid State Sci. Technol.

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Porous 4H-SiC layers were fabricated by photochemical etching of n-type 4H-SiC samples with varying resistivity. An etching solution of Na 2 S 2 O 8 and HF was used while Pt deposited at the 4H-SiC surface served as catalyst for the reduction of Na 2 S 2 O 8 . The contact resistance at the Pt/4H-SiC junction was decreased by annealing and surface near phosphorous doping. This enabled the porosification of 4H-SiC with photochemical etching. © The Author(s) 2017. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0021603jss] All rights reserved.Manuscript submitted November 9, 2015; revised manuscript received December 14, 2015. Published December 24, 2015 Compared to porous silicon, porous silicon carbide has many outstanding properties such as an enhanced chemical inertness, high heat conductivity and a relatively large bandgap. Therefore it offers novel application scenarios as electrode material in super-capacitors, 1 membranes for biomedical devices 2 or in the manufacturing of high temperature gas sensors. Controlling the etching depth for 6H-SiC is still an unresolved issue, while the formation of a porous structure on 4H-SiC is limited to surface regions in the nanometer range. 6,7 In this letter the formation of porous 4H-SiC by MAPCE is presented for samples having different bulk resistivity by decreasing the contact resistance at the Pt/4H-SiC junction. ExperimentalAs substrates, n-type 4H-SiC wafers with low and high resistivity (ρ = 0.02 · cm and ρ = 0.106 · cm respectively) were purchased from CREE. Square samples of these substrates with an area of 1 cm 2 were used for experiments. For cleaning, all samples were consecutively soaked for 5 minutes in acetone, isopropanol and ethanol. Then a 300 nm thin Pt layer was sputter deposited on the samples with a LS730S Von Ardenne sputter machine, while a 0.7 × 0.7 cm 2 silicon piece in the center of the sample served as shadow mask. Prior to Pt deposition, the samples were cleaned in situ using an inverse sputter etching procedure with Argon plasma for 60 s at 1000 W. Finally the samples were placed in an etching solution containing 0.04 mol/L Na 2 S 2 O 8 and 1.31 mol/L HF for 2 hours under UV irradiation. As etching chamber a porous silicon etching cell from AMMT GmbH with a total volume of 1.5 L was used. Front side illumination was z E-mail: markus.leitgeb@tuwien.ac.at done with a 250 Watt ES280LL mercury arc lamp at full spectrum. The distance from the samples to the UV source was approximately 3 cm. In this configuration the effective volume of the etching solution was 150 mL.For electrical characterization the Agilent B2911A Precision Source/Measure Unit was used. An array of circular Pt/TiN/Pt trilayered pads was sputter deposited onto 1 cm 2 square samples. The diameter of the pads was 1 mm and the dist...

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Section: Resultsmentioning

confidence: 99%

Communication—The Role of the Metal-Semiconductor Junction in Pt-Assisted Photochemical Etching of Silicon Carbide

Leitgeb¹,

Backes²,

Zellner³

et al. 2015

ECS J. Solid State Sci. Technol.

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“…In our method the diffusion process is carried out in air atmosphere in condition of surface oxidation to create a flow of vacancies of Si and C from the crystal surface into the bulk of the sample [17]. Increasing vacancy concentration increases the diffusion constant and solubility of impurity up to 10 20 cm −3 [20][21][22]. Temperature of diffusion in this method is between 1150 and 1300 ∘ C which is lower compared to the conventional diffusion process (more 2000 ∘ C).…”

Section: Methodsmentioning

confidence: 99%

“…This diffusion in 4H-SiC is performed at different temperatures ranging between 1150 and 1300 ∘ C during 30 min by our new method patented in USA and Uzbekistan and described in detail [17][18][19][20][21][22][23][24][25][26]. Below some information about new method of diffusion is given briefly.…”

Section: Methodsmentioning

confidence: 99%

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Atabaev

Juraev

Pak

2017

Advances in Condensed Matter Physics

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P-i-n 4H-SiC⟨Al⟩ diode structures are fabricated by a new approach which is low temperature diffusion of aluminium (Al) in SiC using flow of vacancy defects from surface into volume of crystal. In conventional diffusion in SiC, the operating temperature is usually >2050 ∘ C while, in this approach, the diffusion temperature is between 1150 and 1300 ∘ C. As the conditions of formation of junction in this method essentially differ from conventional diffusion (low temperature and process of diffusion are accompanied by forming structure defects), it is interesting to identify the advantages and disadvantages of a new method of diffusion. Fabricated p-i-n structures have low breakdown voltage between 80 and 140 V (due to the influence of dislocations and micropipes) and are capable of operating at temperatures up to 300 ∘ C. Structure has fast switching time and duration of the reverse recovery current less than 10 ns. We believe that because of low diffusion temperature, the concentration of nitrogen related trapping levels is relatively low and as a result the fast switching time is observed in our samples. It has been shown that this low temperature diffusion technology can be used to fabricate -region and high resistive -region of SiC diode in single-step process.

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“…Diffusion of boron in 4H-SiC has been performed at different temperatures between 1150 and 1300°C by the novel low-temperature diffusion method described in [31][32][33][34][35][36][37][38][39]. Borosilicate thin film on the surface of SiC has been used as a source for boron atoms.…”

Section: Methodsmentioning

confidence: 99%

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

Atabaev

Juraev

2018

Advances in Materials Science and Engineering

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Novel method of boron diffusion at low temperatures between 1150 and 1300°C is used for the formation of both p-i SiC junction and i-region in one technological process. As the junction formation conditions in this method are essentially different from those in the conventional diffusion (low temperatures and process of diffusion are accompanied by formation of structure defects), it is of special interest to identify advantages and disadvantages of a new method of diffusion. Developed SiC p-i-n junction diodes have fast switching time, and the duration of the reverse recovery current is less than 10 ns with a breakdown voltage of 120-140 V. Fabricated diodes possess capability to operate at temperatures up to 300°C. As the temperature of diffusion process is lower than the melting temperature of silicon, this new technology allows fabrication of diodes on the base of SiC/Si epitaxial structures.

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A new approach in impurity doping of 4H-SiC using silicidation

Cited by 11 publications

References 24 publications

Communication—The Role of the Metal-Semiconductor Junction in Pt-Assisted Photochemical Etching of Silicon Carbide

Communication—The Role of the Metal-Semiconductor Junction in Pt-Assisted Photochemical Etching of Silicon Carbide

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

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