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Oxidation and silicidation have been found to enhance phosphorus diffusion and incorporation in 4H-SiC. Depth profiling by secondary ion mass spectrometry showed significant concentration of phosphorus in the order of 10 18 -10 19 cm À3 in the near-surface region of 4H-SiC in both oxidation and silicidation-assisted phosphorus-diffused samples. However, silicidation was remarkably more effective than oxidation in promoting phosphorus diffusion, producing comparable phosphorus concentration at even greater depth at a temperature of only 900 C. Specific contact resistance values of the phosphorus-doped samples confirmed feasibility of this method in ohmic contact fabrication on SiC. V C 2013 AIP Publishing LLC. [http://dx.

Solid state thermal diffusion is not a common method of impurity doping in silicon carbide (SiC) device fabrication due to the extremely high temperatures required for such a process to occur. We have recently reported that solid state impurity doping by thermal diffusion in SiC is possible if there is a parallel mechanism, such as oxidation or silicidation that creates silicon or carbon vacancies, which then allows dopant impurities to diffuse into these vacancies. This paper describes the experimental procedures by which oxidation and silicidation can be used to generate vacancies and enhance impurity doping at temperatures below 1400 ºC .

Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies.