2010
DOI: 10.1016/j.tsf.2010.03.107
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Oxide film assisted dopant diffusion in silicon carbide

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Cited by 15 publications
(12 citation statements)
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“…Diffusion of boron in 4H-SiC has been performed at different temperatures between 1150 and 1300°C by the novel low-temperature diffusion method described in [31][32][33][34][35][36][37][38][39]. Borosilicate thin film on the surface of SiC has been used as a source for boron atoms.…”
Section: Methodsmentioning
confidence: 99%
“…Diffusion of boron in 4H-SiC has been performed at different temperatures between 1150 and 1300°C by the novel low-temperature diffusion method described in [31][32][33][34][35][36][37][38][39]. Borosilicate thin film on the surface of SiC has been used as a source for boron atoms.…”
Section: Methodsmentioning
confidence: 99%
“…This diffusion in 4H-SiC is performed at different temperatures ranging between 1150 and 1300 ∘ C during 30 min by our new method patented in USA and Uzbekistan and described in detail [17][18][19][20][21][22][23][24][25][26]. Below some information about new method of diffusion is given briefly.…”
Section: Methodsmentioning
confidence: 99%
“…Recently, research has been done on the use of boron oxide as a means of diffusing boron in SiC [15,16]. Here, we investigate the possibility of introducing phosphorus into SiC using the reaction between phosphorus oxide and SiC.…”
Section: Thermodynamicsmentioning
confidence: 99%