A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback Characteristics

Wang, Yi–Ze; Lu, Guangyi; Wang, Yuan

doi:10.1109/access.2020.2972042

Cited by 9 publications

(1 citation statement)

References 36 publications

(26 reference statements)

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“…ESD designers can only improve the structure and dimensions of these devices through a trial-and-error approach, which is time-consuming and incurs high costs [4]. In recent years, researchers have proposed ESD device behavioral models that do not consider the gate control mechanism, aiming to simulate the snapback behavior of conventional ESD devices [5]. Shen et al proposed a new model based on GGNMOS that utilizes a voltage-controlled current source to study the avalanche breakdown effect, enabling the simulation of the snapback behavior of GGNMOS devices [6].…”

Section: Introductionmentioning

confidence: 99%

Principle and verification of behavior model of gate-controlled SCR with adjustable on-resistance

Bao,

Wang,

Liu

et al. 2024

Eng. Res. Express

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This paper delineates the implementation of a gate-controlled Silicon Controlled Rectifier (SCR) behavioral model using Cadence software. The model is designed to tackle the absence of gate-control effect characteristics in extant models. This enables more precise simulation of the snapback behavior of such gate-controlled SCR devices under electrostatic discharge (ESD) stress. This work fabricates three types of SCR devices: Traditional SCR(T-SCR), Single-Gate SCR (SG-SCR), and a Double-Gate SCR (DG-SCR). These devices are fabricated using the 0.18µm CMOS process and varied in the number of gates. The physical principles of the device are validated through two-dimensional electrical simulations. Furthermore, the model results are confirmed by the transmission line pulse (TLP) test results of the final device. The results demonstrate that the simulation results of the gate-controlled SCR behavioral model fit the TLP test results of the three SCR devices. The model's applicability across different number of fingers devices confirms its scalability. Further, the model was simulated with the HBM equivalent circuit, and the comparison with the actual results confirmed the model's applicability to HBM simulation.

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Section: Introductionmentioning

confidence: 99%

Principle and verification of behavior model of gate-controlled SCR with adjustable on-resistance

Bao,

Wang,

Liu

et al. 2024

Eng. Res. Express

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Characteristic parameter model and circuit‐level simulation of gate‐controlled dual direction SCR for on‐chip ESD protection

Liu,

Wang,

Yang

et al. 2024

Circuit Theory & Apps

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SummaryDual‐directional SCR (DDSCR) with bidirectional discharge paths and high robustness is widely employed for electrostatic discharge (ESD) protection in integrated circuits. However, the design and simulation of on‐chip ESD protection circuits for dual‐directional paths remain challenging due to a lack of relevant device models. This paper designs a Gate‐Controlled Dual‐Direction SCR (GDDSCR) for providing electrostatic discharge (ESD) protection in industry‐level temperature sensors. Furthermore, a new behavioral model is developed based on the GDDSCR for simulating ESD protection circuits along both forward and reverse paths. Experimental results demonstrate that the GDDSCR behavioral model accurately reproduces the IV characteristics observed in bidirectional transmission line pulse (TLP) tests. In addition, the equivalent circuit based on human body model (HBM) is used for transient simulation, and the accuracy of the model is verified by relevant HBM experiments. The proposed model allows the direct extraction of parameters such as trigger voltage (Vt1), holding voltage (Vh), and on‐state resistance (Ron) through TLP testing, facilitating easy application to other types of DDSCR devices.

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Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier

Zhang,

Wang,

Yang

et al. 2023

Solid-State Electronics

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A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback Characteristics

Cited by 9 publications

References 36 publications

Principle and verification of behavior model of gate-controlled SCR with adjustable on-resistance

Principle and verification of behavior model of gate-controlled SCR with adjustable on-resistance

Characteristic parameter model and circuit‐level simulation of gate‐controlled dual direction SCR for on‐chip ESD protection

Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier

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