A new charge-control model for single- and double-heterojunction bipolar transistors

Parikh, Chetan D.; Lindholm, F.A.

doi:10.1109/16.137308

Cited by 41 publications

(20 citation statements)

References 23 publications

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“…The results of the HSPICE optimization for the 2u6d2f device are shown in Table 5 Aside from the agreement in saturation (which can be imputed to the bias dependence of RC and recombination), the 3uldlf and 3u5dlf models fall within the ± 5% difference criterion for model success. This level of performance is at least as good as models found in current literature [23,24,26,27]. The 2u6d2f model has fair agreement in the reverse active region, good to poor agreement in the saturation region, and excellent agreement in the forward active region (neglecting differences due to self-heating).…”

Section: U6d2fsupporting

confidence: 79%

“…The other two devices were fabricated to Table 4 and changes the standard pn products at the SCR boundaries [23,24,62).…”

Section: Knovledge Of the Fabrication Processmentioning

confidence: 99%

“…The only user defined constant is x, the mole fraction of A]. The expressions below are taken from the following references [24,55,57,59]. "X 2o = 6.6288 10s…”

Section: Conclusion and Roomeniationsmentioning

confidence: 99%

“…The expressions below are taken from refeaences [24,55,57,59]. The effective zero-bias base width Wb, is found by subtracting the depletion widths in the base on both the emitter and collector sides: …”

mentioning

confidence: 99%

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A physics-based heterojunction bipolar transistor model for integrated circuit simulation

Fellows¹,

Bright²,

Jenkins³

Proceedings of National Aerospace and Electronics Conference (NAECON'94)

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Section: U6d2fsupporting

confidence: 79%

“…The other two devices were fabricated to Table 4 and changes the standard pn products at the SCR boundaries [23,24,62).…”

Section: Knovledge Of the Fabrication Processmentioning

confidence: 99%

“…The only user defined constant is x, the mole fraction of A]. The expressions below are taken from the following references [24,55,57,59]. "X 2o = 6.6288 10s…”

Section: Conclusion and Roomeniationsmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

A physics-based heterojunction bipolar transistor model for integrated circuit simulation

Fellows¹,

Bright²,

Jenkins³

Proceedings of National Aerospace and Electronics Conference (NAECON'94)

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“…4 More recently, many authors have used this concept in analytical models for heterojunction bipolar transistors and heterojunction bipolar photransistors. 5,6 Nelson et al has employed this concept to explain the lower dark current measured in quantum well pin structures, 7 while Corkish and Honsberg have used PC1D solar cell simulation tool to demonstrate QFL variations at abrupt p-n heterojunctions in a range of doping levels. 8 In all these investigations the heterojunction consisted of a p and n doped layers.…”

Section: ͑2͒mentioning

confidence: 99%

High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

Ginige

Cherkaoui

Kwan

et al. 2004

Journal of Applied Physics

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This article analyzes and explains the observed temperature dependence of the forward dark current of lattice matched In0.53Ga0.47As on InP diodes as a function of voltage. The experimental results show, at high temperatures, the characteristic current-voltage (I–V) curve corresponding to leakage, recombination, and diffusion currents, but at low temperatures an additional region is seen at high fields. We show that the onset of this region commences with high injection into the lower-doped base region. The high injection is shown by using simulation software to substantially alter the minority carrier concentration profile in the base, emitter and consequently the quasi-Fermi levels (QFL) at the base/window and the window/cap heterojunctions. We show that this QFL splitting and the associated electron “pile-up” (accumulation) at the window/emitter heterojunction leads to the observed pseudo-n=2 region of the current-voltage curve. We confirm this phenomenon by investigating the I–V–T characteristics of diodes with an InGaAsP quaternary layer (Eg=1 eV) inserted between the InP window (Eg=1.35 eV) and the InGaAs emitter (Eg=0.72 eV) where it serves to reduce the barrier to injected electrons, thereby reducing the “pile-up.” We show, in this case that the high injection occurs at a higher voltage and lower temperature than for the ternary device, thereby confirming the role of the “accumulation” in the change of the I–V characteristics from n=1 to pseudo-n=2 in the ternary latticed matched device. This is an important phenomenon for consideration in thermophotovoltaic applications. We, also show that the activation energy at medium and high voltages corresponds to the InP/InGaAs conduction band offset at the window/emitter heterointerface.

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Field Effect Transistors and Heterojunction Bipolar Transistors

Morkoç̌

2008

Handbook of Nitride Semiconductors and Devices

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A new charge-control model for single- and double-heterojunction bipolar transistors

Cited by 41 publications

References 23 publications

A physics-based heterojunction bipolar transistor model for integrated circuit simulation

A physics-based heterojunction bipolar transistor model for integrated circuit simulation

High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

Field Effect Transistors and Heterojunction Bipolar Transistors

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