A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Tang, Wei; Lyu, Fei; Wang, Dunhui; Pan, Hongbing

doi:10.3390/s18041065

Cited by 9 publications

(4 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the key characteristics of the Hall sensor is the effect of offset voltage and sensitivity on temperature. With the advancement of fabrication technology, different offset compensation methods are known, such as calibration, device symmetry, mutual compensation, and reduction of rotating current offset [ 33 , 34 ]. Figure 9 shows the relationship between the offset voltage, sensitivity, and temperature of the S-size Hall sensor when the working current is 10 mA.…”

Section: Resultsmentioning

confidence: 99%

Design and Application of MEMS-Based Hall Sensor Array for Magnetic Field Mapping

et al. 2021

View full text Add to dashboard Cite

A magnetic field measurement system based on an array of Hall sensors is proposed. The sensors are fabricated using conventional microelectromechanical systems (MEMS) techniques and consist of a P-type silicon substrate, a silicon dioxide isolation layer, a phosphide-doped cross-shaped detection zone, and gold signal leads. When placed within a magnetic field, the interaction between the local magnetic field produced by the working current and the external magnetic field generates a measurable Hall voltage from which the strength of the external magnetic field is then derived. Four Hall sensors are fabricated incorporating cross-shaped detection zones with an identical aspect ratio (2.625) but different sizes (S, M, L, and XL). For a given working current, the sensitivities and response times of the four devices are found to be almost the same. However, the offset voltage increases with the increasing size of the detection zone. A 3 × 3 array of sensors is assembled into a 3D-printed frame and used to determine the magnetic field distributions of a single magnet and a group of three magnets, respectively. The results show that the constructed 2D magnetic field contour maps accurately reproduce both the locations of the individual magnets and the distributions of the magnetic fields around them.

show abstract

Section: Resultsmentioning

confidence: 99%

Design and Application of MEMS-Based Hall Sensor Array for Magnetic Field Mapping

et al. 2021

View full text Add to dashboard Cite

show abstract

“…This means that the magnetic field direction should be known in advance and it should not change during the measurement. This problem can be solved by using three orthogonally positioned sensors [ 4 , 14 ], which allow the measurement of not only the magnitude, but also the direction of the magnetic field. This is especially essential in certain industrial, medical, robotic, or virtual reality applications.…”

Section: Introductionmentioning

confidence: 99%

“…This is especially essential in certain industrial, medical, robotic, or virtual reality applications. A three-dimensional magnetic field sensor based on a single spin–orbit torque device [ 15 ], a three-dimensional magnetometer based on a simple Hall device in a planar geometry [ 14 , 16 ], or a three-axis induction sensor [ 17 ] can be used for this purpose. However, such a solution is good for measuring relatively long-pulsed magnetic fields.…”

Section: Introductionmentioning

confidence: 99%

Measurement System for Short-Pulsed Magnetic Fields

Stankevič

Kersulis

Dilys

et al. 2023

Sensors

View full text Add to dashboard Cite

A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganite film with minimized memory effect, and a magnetic field recording module. The memory effect of the La1−xSrx(Mn1−yCoy)zO3 manganite films doped with different amounts of Co and Mn was investigated by measuring the magnetoresistance (MR) and resistance relaxation in pulsed magnetic fields up to 20 T in the temperature range of 80–365 K. It was found that for low-temperature applications, films doped with Co (LSMCO) are preferable due to the minimized magnetic memory effect at these temperatures, compared with LSMO films without Co. For applications at temperatures higher than room temperature, nanostructured manganite LSMO films with increased Mn content above the stoichiometric level have to be used. These films do not exhibit magnetic memory effects and have higher MR values. To avoid parasitic signal due to electromotive forces appearing in the transmission line of the sensor during measurement of short-pulsed magnetic fields, a bipolar-pulsed voltage supply for the sensor was used. For signal recording, a measurement module consisting of a pulsed voltage generator with a frequency up to 12.5 MHz, a 16-bit ADC with a sampling rate of 25 MHz, and a microprocessor was proposed. The circuit of the measurement module was shielded against low- and high-frequency electromagnetic noise, and the recorded signal was transmitted to a personal computer using a fiber optic link. The system was tested using magnetic field generators, generating magnetic fields with pulse durations ranging from 3 to 20 μs. The developed magnetic field measurement system can be used for the measurement of high-pulsed magnetic fields with pulse durations in the order of microseconds in different fields of science and industry.

show abstract

“…In recent years, in order to improve the performance of the device, five-contact, four-contact and six-contact structures have gradually appeared [5,6,7,8,9], but they still have problems of high offset voltage and low sensitivity. Aiming to solve these problems, this paper proposes a double three-contact vertical Hall device structure and its conformal mapping analysis method to improve the performance of the device.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Orthogonal Coupling Structure Based on Double Three-Contact Vertical Hall Device

Wei

2019

Micromachines

View full text Add to dashboard Cite

A vertical Hall device is an important component of 3D Hall sensors, used for detecting magnetic fields parallel to the sensor surface. The Hall devices described in existing research still have problems, such as large offset voltage and low sensitivity. Aiming to solve these problems, this study proposes a double three-contact vertical Hall device with low offset voltage, and a conformal mapping analysis method to improve the sensitivity of the device. Secondly, an orthogonal coupling structure composed of two sets of double three-contact vertical Hall devices is proposed, which further reduces the offset voltage of the device. Finally, the TCAD simulation software was used to analyze the performance of the devices, and an existing vertical Hall device was compared to ours. The results show that the orthogonal coupling structure in this study exhibits better performance, reaching an average voltage sensitivity of 17.5222 mV/VT and an average offset voltage of about 0.075 mV. In addition, the structure has the same magnitude of offset voltage in the four phases of the rotating current method. This characteristic enables the back-end circuit to more accurately filter out the offset voltage and acquire the Hall signal.

show abstract

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Cited by 9 publications

References 27 publications

Design and Application of MEMS-Based Hall Sensor Array for Magnetic Field Mapping

Design and Application of MEMS-Based Hall Sensor Array for Magnetic Field Mapping

Measurement System for Short-Pulsed Magnetic Fields

Analysis of Orthogonal Coupling Structure Based on Double Three-Contact Vertical Hall Device

Contact Info

Product

Resources

About