The paper is concerned with the parameter study of a new
generation of micro-pixel avalanche photodiodes (MAPD) with deeply
buried pixel structure, also named silicon photomultipliers (SiPM)
or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM
was manufactured in the frame of collaboration with Zecotek
Company. Measurements were carried out and discussed in terms of the
important parameters such as the current-voltage and
capacitance-voltage characteristic, gain, the temperature
coefficient of breakdown voltage, breakdown voltage, and gamma-ray
detection performance using an LFS scintillator. The obtained
results showed that the newly developed MAPD-3NM photodiode
outperformed the previous generation in most parameters and can be
successfully applied in space application, medicine, high-energy
physics, and security. New proposals are also discussed, for further
improvement of the parameters of the MAPD photodiodes that will be
produced in the coming years.