A New Facility for Ion Beam Surface Analysis

Hemment, P.L.F.; Mynard, J.E.; Maydell-Ondrusz, E.A.; Stephens, K.G.

doi:10.1007/978-3-642-69156-0_34

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…34 The published data imply that, within the range of fluences studied, the surface moves at a constant rate u: = -0.78 x cm3. Owing to the high energy we can set m0 = l. 33 Inserting these numbers and the previously quoted atomic volumes in Eqn (6) we get Yo = 0.21 Si atoms per 0 atom, in very good agreement with the interpolated curve in Fig.…”

Section: Inspection Ofmentioning

confidence: 97%

Sputtering Yield Changes, Surface Movement and Apparent Profile Shifts in SIMS Depth Analyses of Silicon Using Oxygen Primary Ions

Wittmaack

1996

Surf. Interface Anal.

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Section: Inspection Ofmentioning

confidence: 97%

Sputtering Yield Changes, Surface Movement and Apparent Profile Shifts in SIMS Depth Analyses of Silicon Using Oxygen Primary Ions

Wittmaack

1996

Surf. Interface Anal.

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“…[2][3][4][5] Whereas "early" high-dose SIMOX had similar implant energy and dose to "contemporary" high-dose material, the structure and electrical properties differ dramatically because of a decade of progress in equipment, processing conditions, and understanding of the material. [2][3][4][5] Whereas "early" high-dose SIMOX had similar implant energy and dose to "contemporary" high-dose material, the structure and electrical properties differ dramatically because of a decade of progress in equipment, processing conditions, and understanding of the material.…”

mentioning

confidence: 99%

Evolution and Future Trends of SIMOX Material

Krause¹,

Anc²,

Roitman³

1998

MRS Bull.

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Oxygen-implanted silicon-on-insulator (SOI) material, or SIMOX (separation by implantation of oxygen), is another chapter in the continuing development of new material technologies for use by the semiconductor industry. Building integrated circuits (ICs) in a thin layer of crystalline silicon on a layer of silicon oxide on a silicon substrate has benefits for radiationhard, high-temperature, high-speed, low-voltage, and low-power operation, and for future device designs. Historically the first interest in SIMOX was for radiation-hard electronics for space, but the major application of interest currently is low-power, high-speed, portable electronics. Silicon-on-insulator also avoids the disadvantage of a completely different substrate such as sapphire or gallium arsenide. Formation of a buried-oxide (BOX) layer by high-energy, high-dose, oxygen ion implantation has the advantage that the ion-implant dose can be made extremely precise and extremely uniform. However the silicon and oxide layers are highly damaged after the implant, so high-temperature annealing sequences are required to restore devicequality material. In fact SIMOX process development necessitated the development of new technologies for high-dose implantation and high-temperature annealing.

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A New Facility for Ion Beam Surface Analysis

Cited by 2 publications

References 5 publications

Sputtering Yield Changes, Surface Movement and Apparent Profile Shifts in SIMS Depth Analyses of Silicon Using Oxygen Primary Ions

Sputtering Yield Changes, Surface Movement and Apparent Profile Shifts in SIMS Depth Analyses of Silicon Using Oxygen Primary Ions

Evolution and Future Trends of SIMOX Material

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