A new global finite element analysis of microwave circuits including lumped elements

Abstract

A new fullwave global analysis of coinplex inhomogeneous structures including passive or active, linear or non linear lumped elements is presented.Only one electromagnetic simulation of tlie distributed part, by a 3D finite element method using edge elements, is needed corresponding to the insertion of several lumped elements placed at tlie same position. Results for a resistor, a diode inserted in a niicrostrip circuit as well as a G u m diode amplifier are presented and comparisons with measurements are given for an active structure.

Quasi‐static numerical modeling of miniature RF circuits based on lumped equivalent circuits

“…With a substitution of the expansion of E and the explicit weighting function W i , this term can be assembled into the corresponding global matrices in Equations (4) and (5), effecting the modeling of the resistor, which can be extended to any other impedance elements or pre-characterized devices in terms of their admittances.…”

“…The most accurate modeling is the one called full-wave analysis that solves Maxwell's equations to account for all the distributive and wave effects of the circuits. [1][2][3][4][5][6][7][8][9][10][11][12] However, such an analysis, typically based on the moment method, the transmission line method, the finite difference time domain method, or the finite element method, is usually time intensive as it requires either time marching for a large number of time steps or solving a large numerical system at many frequencies to obtain the characteristics of the circuit over a given frequency band. To interpret the solutions of the full-wave analysis and facilitate the analysis and design of complicated RF circuits, lumped equivalent circuit models have been proposed and widely adopted.…”

“…Because of their complexity, their design, and optimization have to resort to numerical modeling. The most accurate modeling is the one called full‐wave analysis that solves Maxwell's equations to account for all the distributive and wave effects of the circuits 1‐12 . However, such an analysis, typically based on the moment method, the transmission line method, the finite difference time domain method, or the finite element method, is usually time intensive as it requires either time marching for a large number of time steps or solving a large numerical system at many frequencies to obtain the characteristics of the circuit over a given frequency band.…”

Correction to "A review of global modeling of charge transport in semiconductors and full-wave electromagnetics"

“…The microwave amplifiers were simulated using the equivalent voltage and current source approaches for the transistor [73]. The characterization of microwave circuits containing various lumped components was performed using a global EM analysis [74]. In [67]- [74], the active devices were not physically simulated.…”

“…The characterization of microwave circuits containing various lumped components was performed using a global EM analysis [74]. In [67]- [74], the active devices were not physically simulated. Instead, equivalent-circuit models were used.…”