A new junction termination technique: The Deep Trench Termination (DT&lt;sup&gt;2&lt;/sup&gt;)

A process for deep trench filling by BenzoCycloButene (BCB) polymer is explored. Deep trenches with 100-lm depth and different aspect ratios from 1.4 to 20 have been successfully filled by BCB. Besides, chemical mechanical polishing (CMP) of BCB is studied with the main goals of smoothing surface topography of substrate after BCB filling and removing excess BCB coating which may be necessary in some applications. Removal rate for BCB, V RR , of about 0.24 lm/min has been achieved for hard cured BCB films using acid slurry. After CMP, the BCB layer showed a roughness of about 1.36 nm (Rq, measured by atomic force microscopy, AFM).

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“…The electrical results on the realized junction termination are under publication (Théolier et al 2009). …”

Section: Resultsmentioning

confidence: 99%

Filling of very deep, wide trenches by BenzoCycloButene polymer

Mahfoz-Kotb¹,

Isoird²,

Morancho³

et al. 2009

Microsyst Technol

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“…The used dielectric in this paper is the silicon oxide. Theolier [21,22] has used this technique to design efficiency termination of superjunction silicon MOSFET (Deep Trench Termination DT 2 ), but by using the BCB (Benzo-Cyclo-Butene) as a dielectric in place of polyimide. The polyimide is a sort of polymer [23,24].…”

Section: New Termination Architecturementioning

confidence: 99%

High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Arbess

Isoird

Zerarka

et al. 2015

Diamond and Related Materials

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Using finite element simulations with Sentaurus TCAD (Technology Computer-Aided Design) software, a progress from simple and classic termination for a Schottky diode to new topology termination has been studied in this paper. A polyimide trench under field plate termination has been used. The efficiency increases from 67% for a simple field plate with optimum parameters up to 97%. The maximum electric field in the termination dielectric has been evaluated also. A wide study of the termination geometry has been made in order to extract the optimum parameters in two directions. The first one is to obtain a high efficiency regarding the breakdown voltage, and the second one is to have the minimum electric field peak at the termination edge.

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“…1. 16. Due to the relatively low operating voltage in this circuit, a power MOSFET is typically used as the switch in the high-side location.…”

Section: Dc-dc Sync-buck Convertermentioning

confidence: 99%

Advanced Power MOSFET Concepts

Baliga

2010

140

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except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights.Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) DedicationThe author would like to dedicate this book to his wife, Pratima, for her unwavering support throughout his career devoted to the enhancement of the performance and understanding of power semiconductor devices.v . PrefaceWith increased awareness of the adverse impact on the environment resulting from carbon emissions into the atmosphere, there is a growing demand for improving the efficiency of power electronic systems. Power semiconductor devices are recognized as a key component of all power electronic systems. It is estimated that at least 50 percent of the electricity used in the world is controlled by power devices. With the wide spread use of electronics in the consumer, industrial, medical, and transportation sectors, power devices have a major impact on the economy because they determine the cost and efficiency of systems. After the initial replacement of vacuum tubes by solid state devices in the 1950s, semiconductor power devices have taken a dominant role with silicon serving as the base material. These developments have been referred to as the Second Electronic Revolution.In the 1970s, the power MOSFET product was first introduced by International Rectifier Corporation. Although initially hailed as a replacement for all bipolar power devices due to its high input impedance and fast switching speed, the silicon power MOSFET has successfully cornered the market for low voltage (<100 V) and high switching speed (>100 kHz) applications but failed to make serious inroads in the high voltage arena. This is because the on-state resistance of silicon power MOSFETs increases very rapidly with increase in the breakdown voltage. The resulting high conduction loss, even when using larger more expensive die, degrades the overall system efficiency.The large on-state voltage drop for high voltage silicon power MOSFETs and the large drive current needed for silicon power bipolar transistors encouraged the development of the insulated gate bipolar transistor (IGBT) [1]. First commercialized in the early 1980s, the IGBT has become the dominant device used in all medium and high power electronic systems in the consumer, industrial, transportation, and military systems, and even found applications in the medical sector. The US Department of Energy has estimated that the implementation of IGBT-based variable speed drives for controlling motors is producing an energy savings of over 2 quadrillion btus per year, wh...

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A new junction termination technique: The Deep Trench Termination (DT<sup>2</sup>)

Cited by 24 publications

References 11 publications

Filling of very deep, wide trenches by BenzoCycloButene polymer

Filling of very deep, wide trenches by BenzoCycloButene polymer

High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Advanced Power MOSFET Concepts

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