A new method for the growth of GaAs epilayer at low H2 pressure

Duchemin, J.P.; Bonnet, Muriel; Koelsch, F.; Huyghe, D.

doi:10.1016/0022-0248(78)90432-3

Cited by 81 publications

(11 citation statements)

References 16 publications

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“…The decomposition of silane is a thermally activated process [218]. Typical MOVPE sources are silicon hydrides diluted in a high-pressure gas mixture.…”

Section: Siliconmentioning

confidence: 99%

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Biefeld

Koleske

Cederberg

2015

Handbook of Crystal Growth

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“…The decomposition of silane is a thermally activated process [218]. Typical MOVPE sources are silicon hydrides diluted in a high-pressure gas mixture.…”

Section: Siliconmentioning

confidence: 99%

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Biefeld

Koleske

Cederberg

2015

Handbook of Crystal Growth

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“…Selective growth has been studied for about 30 years [1,2]. This technique continues to attract considerable interest as a powerful tool for monolithic integration of active and passive photonic functions.…”

Section: Introductionmentioning

confidence: 99%

AlGaInAs MOVPE selective area growth for photonic integrated circuits

Décobert

Binet²,

Maia³

et al. 2015

Advanced Optical Technologies

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We developed a generic photonic integration platform based on selective area growth (SAG) by metal organic vapor-phase epitaxy (MOVPE) of AlGaInAs/InP multiple quantum well (MQW) material. For efficient and predictive band gap engineering of photonic integrated circuits, different SAG zones of active and passive function heterostructures are precisely modeled and characterized. With the vapor-phase diffusion model, using numerical simulations of finite volumes, we extracted the three effective diffusion lengths of Al, Ga, and In species. In our growth conditions, these lengths were 32, 65, and 14 μm, respectively. The Kardar-Parisi-Zhang (KPZ) equation, a classic approach to describe the growing interface profile, is used. AlGaInAs MQW properties are then simulated in terms of thickness, composition, band gap, and biaxial strain variations. Highly resolved μ-photoluminescence and optical interferometer microscopy measurements confirm the validity of the band gap and thickness variations for both bulk and MQW layers. A new diffractometer, with a submillimeter X-ray spot, was used to study the structural properties of the MQW in the center of the SAG area. As an application, we present the realization and operation of full-monolithic high-speed advanced modulation format transmitters based on novel prefixed optical phase switching by fast electro-absorption modulators.Keywords: AlGaInAs multiple quantum wells (MQW); electro-absorption modulators; metal organic vaporphase epitaxy (MOVPE); phase shift keying (PSK); photonic integrated circuit (PIC); selective area growth (SAG).

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“…Attempts to grow superior films by modifications of the OMCVD process include low pressure-, [30][31][32][33][34][35] plasma enhanced-, [36] rapid thermal-, [37] and hybrid MBE-OMCVD systems [38].…”

Section: Introductionmentioning

confidence: 99%

Organometallic Chemical Vapor Deposition of Gaas Using Novel Organometallic Precursors

et al. 1988

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The goals of the research are the design and synthesis of a new class of precursor compounds for III/V compound semiconductor materials, growth of films with these precursors and developoment of an understanding of the relationships between precursor structure, film growth reactions and film properties.Conventional OMCVD of III/V compound materials has a number of inherent safety and processing problems associated with the group III alkyl and group V hydride sources.Our approach to these problems is the synthesis of a single precursor with a fixed III:V stoichiometry and a direct two-center, two-electron sigma III-V bond., These, compounds have the general formula,[R 2 M(R 2 E)] 2 and R 2 M(R 2 E) 2 M R 2 (MM = Al, Ga, In; E=P,As; R,R = alkyl, aryl).The III-V bond in these compounds is stronger than the other bonds and the minium deposition temperature can be controlled by employing subsituents that undergo facile hydrocarbon elimination.

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A new method for the growth of GaAs epilayer at low H2 pressure

Cited by 81 publications

References 16 publications

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

AlGaInAs MOVPE selective area growth for photonic integrated circuits

Organometallic Chemical Vapor Deposition of Gaas Using Novel Organometallic Precursors

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