AlGaInAs MOVPE selective area growth for photonic integrated circuits

Décobert, J.; Binet, Guillaume; Maia, A. D. B.; Lagrée, Pierre‐Yves; Kazmierski, C.

doi:10.1515/aot-2015-0013

Cited by 12 publications

(6 citation statements)

References 19 publications

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“…In the so‐called “InP‐based buried heterostructure lasers,” several epitaxial steps follow each other, such as butt‐joint regrowth (BJR), lateral regrowth, and cladding regrowth. Selective area growth (SAG) is also a suitable technique to grow multiple bandgap materials to integrate different components (laser, modulator, photodetector, etc.) from a single epitaxy.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Besançon

Vaissière

Dupré

et al. 2019

Physica Status Solidi (a)

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Hybrid integration of III-V materials onto silicon by wafer bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform (SPP). Epitaxial regrowth of III-V materials on InP thin seed layer bonded to an oxidized silicon wafer has shown its potential to extend the III-V mature multiregrowth technologies into the SPP. In the approach, an epitaxial InP layer grown on a 4 in. InP wafer is directly bonded onto a SiO 2 /Si 200 mm wafer. After InP substrate removal, the new template (InPoSi) is evaluated for epitaxial regrowth: an eight periods strain-compensated AlGaInAs multiquantum wells (MQW) heterostructure surrounded by two InP cladding layers is grown by metal-organic vapor phase epitaxy (MOVPE) simultaneously on the InPoSi substrate and on an InP substrate as a reference. For the first time, in situ reflectance and curvature measurements are carried out on InPoSi, enabling the assessment of surface roughness and thermal strain of the III-V materials during growth. High material quality is obtained as attested by X-ray diffraction, photoluminescence, atomic force microscopy, and transmission electron microscopy.

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Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Besançon

Vaissière

Dupré

et al. 2019

Physica Status Solidi (a)

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“…Therefore, SAG technique has proved its potential for high-density highperformance integration of PICs. Its potential could be further extended for the integration of lasers, modulators and SOAs by tuning their bandgap at will to match the optimum performance of each individual device [39,45].…”

Section: Discussionmentioning

confidence: 99%

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

et al. 2021

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The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a promising approach for low-cost large-scale fabrication considering the CMOS-technology maturity and scalability. However, Si itself cannot provide an efficient emitting light source due to its indirect bandgap. Therefore, the integration of III-V semiconductors on Si wafers allows us to benefit from the III-V emitting properties combined with benefits offered by the Si photonics platform. Direct epitaxy of InP-based materials on 300 mm Si wafers is the most promising approach to reduce the costs. However, the differences between InP and Si in terms of lattice mismatch, thermal coefficients and polarity inducing defects are challenging issues to overcome. III-V/Si hetero-integration platform by wafer-bonding is the most mature integration scheme. However, no additional epitaxial regrowth steps are implemented after the bonding step. Considering the much larger epitaxial toolkit available in the conventional monolithic InP platform, where several epitaxial steps are often implemented, this represents a significant limitation. In this paper, we review an advanced integration scheme of AlGaInAs-based laser sources on Si wafers by bonding a thin InP seed on which further regrowth steps are implemented. A 3 µm-thick AlGaInAs-based MutiQuantum Wells (MQW) laser structure was grown onto on InP-SiO2/Si (InPoSi) wafer and compared to the same structure grown on InP wafer as a reference. The 400 ppm thermal strain on the structure grown on InPoSi, induced by the difference of coefficient of thermal expansion between InP and Si, was assessed at growth temperature. We also showed that this structure demonstrates laser performance similar to the ones obtained for the same structure grown on InP. Therefore, no material degradation was observed in spite of the thermal strain. Then, we developed the Selective Area Growth (SAG) technique to grow multi-wavelength laser sources from a single growth step on InPoSi. A 155 nm-wide spectral range from 1515 nm to 1670 nm was achieved. Furthermore, an AlGaInAs MQW-based laser source was successfully grown on InP-SOI wafers and efficiently coupled to Si-photonic DBR cavities. Altogether, the regrowth on InP-SOI wafers holds great promises to combine the best from the III-V monolithic platform combined with the possibilities offered by the Si photonics circuitry via efficient light-coupling.

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“…GSMBE presents some advantage over MOVPE for the BJ technology. The anisotropy of molecular beams and the insensitivity of MBE to Selective Area Growth (SAG) effects in the vicinity of the SiO2 mask make it easier to control the butt-joint regrowth step compared to MOVPE, for which the strategy for EML epitaxial growth is rather to take advantages of SAG effects [12]. As illustrated in Fig.…”

Section: Epitaxy and Fabrication Processmentioning

confidence: 99%

Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

Dai¹,

Debrégeas²,

Rold³

et al. 2021

IEEE J. Select. Topics Quantum Electron.

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This paper presents our technological approach for Externally Modulated Lasers (EMLs), based on Semi-Insulating Buried Heterostructure (SIBH) waveguide. We use Gas Source Molecular Beam Epitaxy (GSMBE) to grow the Phosphorusbased multi-quantum wells for both laser and modulator sections with butt-joint integration. The same GSMBE grows the p-doped InP claddings with low-diffusion Be dopant, leading to an accurate control of doping profiles, ensuring very steep modulator extinction curves. We present the main EML design rules and compromises, then apply them to different EMLs aiming at major telecom and datacom applications. After presenting characteristics of the standard 10 Gb/s C-band EML, we propose a 10 Gb/s EML at 1577 nm for next generation access networks, with a record high 10.5 dBm facet modulated power. Then we present high-speed EMLs up to 56 GBaud for datacenter interconnections, both in O-and C-band, aiming at very low peak-to-peak modulation voltage (< 1.2 V), high facet modulated power (> 4.4 dBm), and compatible with uncooled operation (20 to 70 °C). These results confirm the efficiency and versatility of this technological platform for EMLs in a broad range of applications.

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AlGaInAs MOVPE selective area growth for photonic integrated circuits

Cited by 12 publications

References 19 publications

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

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AlGaInAs MOVPE selective area growth for photonic integrated circuits

Cited by 12 publications

References 19 publications

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO2/Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO2/Si Substrate

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

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Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate