A new nanoporous material based on amorphous silicon dioxide

Abstract

Processes for making nanoporous SiO 2 layers on Si via the irradiation of thermally oxidized silicon wafers with fast ions followed by chemical treatment in a solution or vapor of hydrofluoric acid are presented. It is shown that the density, shape, diameter, and length to diameter ratio of channels etched in silicon dioxide can be controlled by varying the regimes of fast ion irradiation or chemical treatment of SiO 2 /Si structures. Track parameters calculated using the thermal spike model are compared with the chemical etching data.

Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

“…An irradiation of SiO 2 /Si structures with swift heavy ions to form ion tracks in SiO 2 layers grown on silicon templates have attracted great interest in recent years. The latent tracks formed in SiO 2 along the swift ion trajectories can be transformed into a nanochannel system by means of chemical treatment in certain etchants [1][2][3][4][5]. The model involves the thermalization of the electronic subsystem of a solid within a time not exceeding 10 À14 s. A few picoseconds later, the electron-phonon interaction leads to fast heating of the region along the fast ion trajectory.…”

“…The authors of Ref. [3] have reported that the track etching appears if the molten region radius is at least 1.6 nm whereas homogeneous etching occurs only for molten region (latent track) radii larger than 3.0 nm. The experimental verification of this track etchability criterion is one of the objectives set for our research.…”

Ion Track Formation and Nanopore Etching in Polyimide: Possibilities in the MeV Ion Energy Regime

“…Nanopore detection and sequencing work on the principle of ionic current disruption or variation. Several insulating materials, for example, graphene, [6,10] silicon nitride, [11,12] silicon oxide, [13,14] and polymer membranes [7,[15][16][17] are being studied for nanoscale channel and pore fabrication. Although silicon-based nanopores allow improved miniaturization and possible integration with other electronic devices, the irregular shape of these pores leads to large current noises.…”

ТЕОРИЯ ФУНКЦИОНАЛА ПЛОТНОСТИ ПО АДСОРБЦИИ МОНОСЛОЯ ZnO НА Si (111) ПОВЕРХНОСТИ

“…Ранее в работах [11][12][13][14], в ходе экспериментального исследования было показано, что электрохимическое и химическое осаждение Zn в нанопоры системы SiO 2 /Si приводит к их полному заполнению. В свою очередь, проведенный рентгеноструктурный анализ показал формирование нанокластеров ZnO с поликристаллической структурой и гексаганальной примитивной фазой с индексами Миллера (200) и (201) (PDF#361451-etalon).…”