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Processes for making nanoporous SiO 2 layers on Si via the irradiation of thermally oxidized silicon wafers with fast ions followed by chemical treatment in a solution or vapor of hydrofluoric acid are presented. It is shown that the density, shape, diameter, and length to diameter ratio of channels etched in silicon dioxide can be controlled by varying the regimes of fast ion irradiation or chemical treatment of SiO 2 /Si structures. Track parameters calculated using the thermal spike model are compared with the chemical etching data.