A new open diffusion technique using evaporated Zn₃P₂and its application to a lateral p-n-p transistor

Thermal degradation of ZnO/InP interfaces: Heteroepitaxial growth of precipitated indium on InP{111} planes

“…10,11 Recently, within the scope of alternative open-tube diffusion method, deposited thin films serving as encapsulants and containing Zn ͑Zn 3 P 2 , nonstoichiometric ZnO, SiO 2 doped by Zn͒ have been employed as a diffusion source of p-dopant ͑Zn͒. [12][13][14][15][16][17][18] During annealing, the thin films protect the InP surface from the thermal decomposition and, moreover, Zn acting as an acceptor diffuses into InP. In contrast to other diffusion methods, this technique is suitable for processing large wafers.…”

Atomic Diffusion in Tetrahedral Semiconductors. Approximative Treatment of Diffusion Theories

“…[4, 51, or open tube methods, e.g. [6]; an interesting recent development is the spin-on technique [7]. Particularly important is the precise control of the diffused regions of a. chip [8].…”