A new pressure microsensor based on dual-gate graphene field-effect transistor with a vertically movable top-gate: Proposal, analysis, and optimization

Tamersit, Khalil; Kotti, Mouna; Fakhfakh, Mourad

doi:10.1016/j.aeue.2020.153346

Cited by 30 publications

(7 citation statements)

References 78 publications

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“…This indicates that the adoption of more appropriate FE nanomaterial with particular coercive field and remnant polarization can increasingly boost the nanodevice performance via enhancing the FE-induced amplified internal gate voltage [ 45 ]. In order to find the best device and ferroelectric parameters that can lead to the ultimate best performance, a parametric investigation [ 47 ] based on metaheuristic techniques (e.g., ant colony optimization, practical swarm optimization, genetic algorithms [ 48 ], etc.) in conjunction with the used NEGF simulation approach can be followed, while solving an advanced optimization problem, which can be a matter for future investigations.…”

Section: Resultsmentioning

confidence: 99%

“…The intriguing results obtained in this computational work can give new impulses to the design, simulation, and optimization of the advanced 2D materials-based nanoscale FETs with ultra-thin dielectrics, which have experienced significant progress [ 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 ]. In addition, the employment of such intriguing steep-slope nanodevices in advanced sensing applications [ 48 , 58 , 59 , 60 , 61 ] can be a matter for future works.…”

Section: Resultsmentioning

confidence: 99%

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Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

et al. 2022

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The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL CNTTFETs) is greatly improved by using the synergy of electrostatic and chemical doping engineering. The computational investigation is conducted via a quantum simulation approach, which solves self-consistently the Poisson equation and the non-equilibrium Green’s function (NEGF) formalism in the ballistic limit. The proposed high-performance JL CNTTFET is endowed with a particular doping approach in the aim of shrinking the band-to-band tunneling (BTBT) window and dilating the direct source-to-drain tunneling window, while keeping the junctionless paradigm. The obtained improvements include the on-current, off-current, ambipolar behavior, leakage current, I60 metric, subthreshold swing, current ratio, intrinsic delay, and power-delay product. The scaling capability of the proposed design was also assessed, where greatly improved switching performance and sub-thermionic subthreshold swing were recorded by using JL CNTTFET with 5 nm gate length. Moreover, a ferroelectric-based gating approach was employed for more enhancements, where further improvements in terms of switching performance were recorded. The obtained results and the conducted quantum transport analyses indicate that the proposed improvement approach can be followed to improve similar cutting-edge ultrascaled junctionless tunnel field-effect transistors based on emerging atomically thin nanomaterials.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

et al. 2022

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“…This is attributed to the larger effective mass of n = 3p + 1 GNRs as well as their higher energy bandgap, which allow better switching with improved SS values due to the resulted mitigation in tunneling subthreshold currents. It is worth noting that the third AGNR family of n = 3p + 2 was not considered because it contains close-to-metallic GNRs with a very small energy bandgap, which are not suitable for FET applications including the phototransistors as in the graphene field-effect transistor (GFET) [ 53 , 54 , 55 ].…”

Section: Resultsmentioning

confidence: 99%

Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison

et al. 2022

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In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed using a rigorous quantum simulation. This latter self-consistently solves the Poisson equation with the mode space (MS) non-equilibrium Green’s function (NEGF) formalism in the ballistic limit. The adopted photosensing principle is based on the light-induced photovoltage, which alters the electrostatics of the carbon-based junctionless nano-phototransistors. The investigations included the photovoltage behavior, the I-V characteristics, the potential profile, the energy-position-resolved electron density, and the photosensitivity. In addition, the subthreshold swing–photosensitivity dependence as a function of change in carbon nanotube (graphene nanoribbon) diameter (width) was thoroughly analyzed while considering the electronic proprieties and the quantum physics in carbon nanotube/nanoribbon-based channels. As a result, the junctionless paradigm substantially boosted the photosensitivity and improved the scaling capability of both carbon phototransistors. Moreover, from the point of view of comparison, it was found that the junctionless graphene nanoribbon field-effect phototransistors exhibited higher photosensitivity and better scaling capability than the junctionless carbon nanotube field-effect phototransistors. The obtained results are promising for modern nano-optoelectronic devices, which are in dire need of high-performance ultra-miniature phototransistors.

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“…14h. 183 In this case, a shift in Dirac point in the negative direction is observed on increasing the pressure or Δt GAP . This characteristic was attributed because of the overlap of the electrostatic potentials generated by both the top and back gates within the graphene structure.…”

Section: Field-effect Transistormentioning

confidence: 86%

Nanocarbon-based sensors for the structural health monitoring of smart biocomposites

Das,

Tripathi,

Dwivedi

et al. 2024

Nanoscale

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A new pressure microsensor based on dual-gate graphene field-effect transistor with a vertically movable top-gate: Proposal, analysis, and optimization

Cited by 30 publications

References 78 publications

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison

Nanocarbon-based sensors for the structural health monitoring of smart biocomposites

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