A new self-aligned contact technology for III-V MOSFETs

Abstract

We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with insitu surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n + doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

Multiple-Gate In0.53Ga0.47As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contacts

“…In addition, self-alignment of the S/D contacts to the gate electrode is desirable for reduced S/D access resistance and for continual scaling of transistor footprint. [25][26][27][28][29][30][31][32] However, there is no report of integration of low-resistance, self-aligned S/D contacts in multiple-gate InGaAs channel MOSFETs.…”