A new transparent conducting oxide in the Ga2O3–In2O3–SnO2 system

Edwards, Doreen D.; Mason, Thomas O.; Goutenoire, F.; Poeppelmeier, Kenneth R.

doi:10.1063/1.118676

Cited by 172 publications

(87 citation statements)

References 10 publications

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“…However, when cells are fabricated with some CdS, part of the CdS layer is consumed and the QE extends an additional 10 nm to 20 nm into the near infrared-in some cases up to 850 nm. 30 This is consistent with sulfur diffusion into CdTe, since the CdTe 1-y S y alloy exhibits large band bowing. 17,33 Other convincing evidence of the interdiffusion has been obtained with grazing angle x-ray diffraction.…”

Section: Device Modelsupporting

confidence: 65%

“…Finally, Figure 3 shows the presence of a high-resistivity tin oxide (HRT) layer between the TCO and CdS layers. A variety of HRT layers have been used [30][31][32] and have been shown to improve device yield and may also enhance stability for some structures and under some stress conditions. Further discussion of the HRT layer is given later.…”

Section: Device Modelmentioning

confidence: 99%

“…There is some evidence that the use of an appropriate high-resistivity TCO buffer layer (HRT) between the low-resistivity TCO and the CdTe can permit the reduction of the CdS layer thickness to zero while maintaining high V OC , provided that a low-sulfur alloy, CdS x Te 1-x , is used at least near the HRT interface. 30 Back Contacts with Copper One of the most challenging aspects to the fabrication of high performance CdTe cells is the achievement of low-resistance back contacts. The typical contact employs Cu in some way, presumably because the Cu diffuses into the CdTe, producing a heavily doped player.…”

Section: Device Modelmentioning

confidence: 99%

“…This could lead to enhanced mobility along the conduction layers because they are otherwise undoped, and therefore, free of ionized impurity scattering The extensive 40 at. % co-substitution of Zn [30] has three of the key cations as structural components, rather than as dopants. These have 4-fold, 6-fold, and 7-fold coordination environments.…”

mentioning

confidence: 99%

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Workshop on Basic Research Opportunities in Photovoltaics

Benner¹,

McConnell²

1999

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Crystalline silicon continues to be the dominant semiconductor material used for terrestrial photovoltaics. This paper discusses the scientific issues associated with silicon photovoltaics processing and cell design that may yield cell and module performance improvements, both evolutionary and revolutionary in nature. We first survey critical issues in "thick" crystalline silicon photovoltaics, including novel separations processes for impurity removal, impurity and defect fundamentals, interface passivation, the role of hydrogen, and high-throughput, kinetically-limited materials processing.Second, we outline emerging opportunities for creation of a very different "thin-layer" silicon cell structure, including the scientific issues and engineering challenges associated with thinlayer silicon processing and cell design. INTRODUCTIONToday's basic research advances in materials physics and materials synthesis and processing will provide the foundation for a large-scale industrial photovoltaics technology that appears likely to develop over the next 10-30 years. Over this time frame, the photovoltaics industry is expected to expand to a production level on the order of 10's GW/year worldwide, at which point it will be able to provide an important global source of clean energy. In this future, a prototypical photovoltaic manufacturing facility may be anticipated to produce on the order of 1 GW/year -and by simple considerations one can project for example that such a plant will need to achieve a throughput on the order of 10 m 2 of modules per minute. 6 Crystalline silicon is very likely to maintain a quite significant role in photovoltaics technology over this time frame. Indeed, between 1992 and 1998, crystalline silicon has expanded its market share from 73% to 86% of the market relative to other photovoltaics technologies. Shipments of crystalline Si photovoltaics amounted to 132 MW per annum by 1998, and currently the Si photovoltaics industry is growing faster than its large cousin the microelectronics industry. Because of this large and continuing investment in silicon photovoltaics, it will be critical to address fundamental materials physics and materials synthesis issues related to crystalline silicon photovoltaics, since these basic research investments may enable further efficiency improvements and cost-reductions to occur. Several significant scientific, technical and economic advantages accrue to crystalline Si:• Its device physics and materials physics issues are better understood than competing device materials. However, very important basic materials physics issues remain outstanding for crystalline silicon photovoltaics; critical issues related to minority carrier lifetime enhancement in multicrystalline or polycrystalline silicon are unlikely to be addressed by the microelectronics industry in the future.• It is a serendipitous materials system: it has an extremely useful native oxide in SiO 2 ; as an elemental material, it lacks stoichiometry problems; dopants such as Al and P can als...

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Section: Device Modelsupporting

confidence: 65%

Section: Device Modelmentioning

confidence: 99%

Section: Device Modelmentioning

confidence: 99%

mentioning

confidence: 99%

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Workshop on Basic Research Opportunities in Photovoltaics

Benner¹,

McConnell²

1999

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“…The transmittance spectra of all the samples are similar to those of In 2 O 3 deposited by reactive evaporation of In in an oxygen atmosphere [26] or spray pyrolysis [11]. The diffuse reflectance spectra of all the samples are similar to those of GaO 3 -In 2 O 3 -SnO 2 systems [27]. The samples have relatively high transmittance in the range of visible spectra.…”

Section: Resultsmentioning

confidence: 84%

The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering

Ye¹,

Cai

et al. 2015

Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering

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In 2 O 3 films were deposited on K9 glass by direct current magnetron sputtering with different oxygen partial pressure percentage. It is found that the films have a body-centered cubic structure, a relatively high transmission in the visible range and an optical band gap of around 3.75 eV. The conductivity of the films increases with the temperature increase up to around 470K due to the increase in the carrier concentration and then decreases due to scattering. The films are n-type and the absolute value of the Seebeck coefficient increases nearly linearly with the increase in the test temperature. The power factor of the films also roughly increases with the increase in the test temperature. It is found that oxygen partial pressure percentage has an effect on defects, electron density and Fermi level position. The films deposited with the oxygen partial pressure percentage of 80% have the best thermoelectric properties.

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Inorganic Nanobelt Materials

Yu¹,

Yao²

2005

Encyclopedia of Inorganic Chemistry

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The aim of this article is to provide a comprehensive review of current research activities that center around inorganic nanobelts. We begin with an overview of synthetic strategies and principles that have been developed for generating 1‐D nanobelts with vapor‐phase growth as well as solution‐based growth routes. We then discuss the synthesis and structure of various inorganic nanobelts, which include elements, oxides, hydroxyl sulfates, chalcogenides, arsenides, phosphides, nitrides, carbon, and carbides. Toward the end, we highlight a range of innovative applications enabled by the unique combination of different potential properties of inorganic nanobelts. Continued development of the synthesis strategies and the preparation procedures as well as functionalization of nanobelts for novel applications will provide significant breakthroughs.

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A new transparent conducting oxide in the Ga2O3–In2O3–SnO2 system

Cited by 172 publications

References 10 publications

Workshop on Basic Research Opportunities in Photovoltaics

Workshop on Basic Research Opportunities in Photovoltaics

The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering

Inorganic Nanobelt Materials

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