A new type of Robust broadband GaN HEMT‐based high power high‐pass/low‐pass 22.5° phase shifter

Abstract

linearly and circularly polarized rectangular dielectric resonator antennas, IEEE Trans Antennas Propag 60 (2012), 751-759. 13. S. Ahdi Rezaeieh and M. Kartal, A new triple band circularly polarized square slot antenna design with crooked t and f-shape strips for wireless applicationsABSTRACT: This article proposes a new type of GaN HEMT-based high power phase shifter operating at X-band. The design includes a 22.5 phase shift network and a high power SPDT switch. The design and resulting performance are discussed in detail and are confirmed by experimental and simulation results, which are in good agreement up to 20 GHz. The one bit phase shifter exhibits good phase performance, insertion loss, and return loss. The proposed phase shifter MMIC has been successfully demonstrated using a 0.5 lm gate GaN HEMT process.

AM/AM and AM/PM Characterization of a GaN Phase and Amplitude Setting Circuit

“…Gallium Nitride (GaN) has become the industry standard semiconductor for microwave and millimeter-wave circuits in high-end electronic systems utilized in space communications. More specifically, GaN technology is currently utilized for signal conditioning, shaping, and generation circuits, including mixers [1,2], voltage-controlled oscillators (VCO) [3,4], phase shifters (PS) [5][6][7][8][9], and attenuators (ATT) [10] at microwave and millimeter-wave frequencies. In particular, when combined, the latter two listed functionalities realize the Phase and Amplitude Setting circuits (PASs), key components in Radio Frequency (RF) front ends, and more specifically, for phased array systems.…”