A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)

Electroforming free resistive switching memory in two-dimensional VOx nanosheets

“…This type of conduction might be from the Poole-Frenkel (PF) emission process. 40 To check the PF process in this region, ln (I/V) was plotted against V 1/2 and a linear relationship was obtained for all the measurement temperatures, which reveals that the current conduction is dominated by PF emission, 41 as shown in Fig. 3(f).…”

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

“…7,8 Other interesting approach is to stack the devices 3-dimensionally, for which two feasible architectures of crossbar and vertical RRAM are reported. 9 However, both the methods require complex experimental processes and may suffer from other limitations. Another alternative and simpler way to increase storage density is to use multilevel cell (MLC) storage technology, in which more than one bit per cell can be stored without further decreasing the physical device size.…”

Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

“…However, in this study, we chose a ReRAM device with low current compliance and high LRS on purpose, in order to minimize the size of the programming transistors and the write/read energies, while accepting a low HRS/LRS ratio. Note as well that this HRS/LRS ratio, smaller than two, can be considered a worst case ratio with respect to the impact of variability compared to other devices, but it does neither significantly decrease the endurance, nor increase the variability [16]. In the following, we show that under this worst case assumption, it is still possible to obtain robust NVFF operation even at low voltages with proper circuit design.…”