2003
DOI: 10.1016/s0040-6090(02)01177-x
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A novel approach for the growth of μc-Si at a high rate over 3 nm/s

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Cited by 15 publications
(8 citation statements)
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“…A literature study has been made to investigate how different groups reach higher deposition rates 2–10. It appears that in mixtures of a few percent silane in hydrogen the power density on the RF electrode was the deposition rate determining step.…”
Section: Resultsmentioning
confidence: 99%
“…A literature study has been made to investigate how different groups reach higher deposition rates 2–10. It appears that in mixtures of a few percent silane in hydrogen the power density on the RF electrode was the deposition rate determining step.…”
Section: Resultsmentioning
confidence: 99%
“…This insight has initiated a large number of studies to obtain high-quality material at deposition rates over 1 nm/s and several successful methods have been reported: by employing so-called 'high-pressure high-power' or 'high-pressure depletion' conditions during plasmaenhanced chemical vapor deposition (PECVD) using radiofrequency (RF) and very high frequency (VHF) excitation [1][2][3]; by the introduction of an additional mesh electrode in PECVD [4]; by plasma excitation with microwave power [5], and by the use of the hot-wire CVD technique [6].…”
Section: Introductionmentioning
confidence: 99%
“…Management of the numerous elementary processes in the gas phase of reactive silane-based plasmas remains an important practical challenge in the fabrication of novel plasma-deposited coatings, interlayers, and functional thin films. In the last decade, low-pressure discharges in various mixtures of silanes (Si x H y ) have been attractive for the plasma-assisted manufacturing of amorphous silicon solar cells [1]. Recently, such plasmas have been used for the gas-phase synthesis of silicon nanocrystals that can be used for controlled structural incorporation into various silicon-based nanostructured films [2].…”
Section: Introductionmentioning
confidence: 99%