The results of the structural, optical, and electrical characterization of ZnS, CdS, and Zn~_~CdxS films grown by the successive ionic layer adsorption and reaction process are presented. Polycrystalline cubic ZnS and hexagonal CdS films grown on glass and on indium-tin oxide covered glass have mean crystallite sizes Dl = 6.5 nm and Dll = 4 nm, and Dl = 30 nm and DII = 15 nm, respectively, perpendicular and parallel to the film. The pure cubic 3C phase is obtained from x = 0 up to x = 0.75 and the pure hexagonal 2H phase from x ~ 0.75 up to x = 1. Texturized heteroepitaxial films of hexagonal CdS have been grown on (111), (001), and (110) Ge, on (1 1 1), (001), an_d_(ll0) GaAs and on (1 1 1) InP substrates. Strongly texturized heteroepitaxial films of cubic ZnS have been grown on (1 1 1) InP and on (001) GaAs. Polycrystalline ZnS films consist of densely packed microcrystalline fibrous grains belonging to the transition zone T in Thornton's structural zone model. Polycrystalline CdS films show a strong <0001> preferred orientation and have a compact columnar structure belonging to Thornton's zone 2. ZnS and CdS films have a refractive index ranging from 2.1 to 2.25 and from 2.15 to 2.35, respectively.