1988
DOI: 10.1016/0022-0248(88)90374-0
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A novel atmospheric pressure technique for the deposition of ZnS by atomic layer epitaxy using dimethylzinc

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Cited by 31 publications
(15 citation statements)
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“…The structure and morphology of these films are better than those obtained by A L E at 25~ (74) and are comparable with those of other polycrystalline films deposited from the vapor phase by E B E at room temperature (75)(76)(77) or at 180~ (80), and with Z n S e films deposited by reactive m a g n e t r o n sputtering at 150~ (79). ZnS films deposited by E B E on unheated A1203 have a high density of microtwins, show surface roughness, and are also strained by extension (75,76).…”
Section: Polycrystalline Zns Cds and Zcs Films--as Is Seen Inmentioning
confidence: 68%
“…The structure and morphology of these films are better than those obtained by A L E at 25~ (74) and are comparable with those of other polycrystalline films deposited from the vapor phase by E B E at room temperature (75)(76)(77) or at 180~ (80), and with Z n S e films deposited by reactive m a g n e t r o n sputtering at 150~ (79). ZnS films deposited by E B E on unheated A1203 have a high density of microtwins, show surface roughness, and are also strained by extension (75,76).…”
Section: Polycrystalline Zns Cds and Zcs Films--as Is Seen Inmentioning
confidence: 68%
“…In recent years we have applied Atomic Layer Deposition (ALD) [26,27] to silicon and silica substrates to access a range of materials that are not available in a form suitable for surface force studies. This process involves a twostep gas phase chemical reaction that results in the production of a single conformal monolayer of material being grown on the surface during each cycle.…”
Section: Atomic Layer Deposition For Producing New Surfaces For Forcementioning
confidence: 99%
“…Atomic Layer Deposition (ALD), formerly known as atomic layer epitaxy, is nowadays a well-stablished technique allowing for the deposition of smooth and pinhole-free thin films of several materials, namely oxides, nitrides, and sulfides, among others [ 1 , 2 , 3 ]. Furthermore, ALD enables the deposition of conformal coatings even in three-dimensional, high aspect ratio nanostructured substrates, while keeping an accurate control on the thickness and stoichiometry of the deposits [ 4 ].…”
Section: Introductionmentioning
confidence: 99%