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The potential to achieve nonrandom Mn doping in ZnS:Mn material is discussed. By ma~ng diffusion measurements, we determine the required. conditions during growth and operation of ZnS:Mn devices that are compatible with nonrandom doping. The probability of forming nearest neighbors and nearby neighbors of Mn in ZnS is calculated for various doping schemes, and the impact of these arrangements on the brightness of electroluminescence and photol.uminescence in ZnS:Mn is discussed.

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