A novel circuit technology with surrounding gate transistors (SGT's) for ultra high density DRAM's

Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

“…Compared with conventional planar MOSFETs, SGTs have several superior characteristics such as high packing density, high current drive capability, and immunity to the short channel effect [1][2][3][4][5][6]. In a cylindrical/surrounding gate MOSFET (CGT/SGT), a rectangular-shaped silicon core in the original SGT has been replaced with a cylindrical silicon core (pillar).…”

Introduction

“…The proposed cylindrical surrounding double-gate radio-frequency complementary metal-oxide-semiconductor (CSDG RF CMOS) device is operating at the microwave frequency regime of the spectrum. This MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes [45,[92][93][94]. We have emphasized on the basics of the circuit elements (e.g., drain current, threshold voltage, resonant frequency, resistances at switch-ON condition, capacitances, energy stored, cross talk, and switching speed) required for the integrated circuit of the radio-frequency subsystem of the CSDG RF CMOS device and role of these basic circuit elements is also discussed [95][96][97].…”

Novel NAND DRAM with surrounding gate transistor (SGT)‐type gain cell

“…The read-out voltage is sufficient, but its cell size is larger than that of DRAM composed of one transistor and one capacitor, because the 3Tr Cell MOS RAM is composed of three transistors. Thus, the authors proposed high-density gain cells based on the following three kinds of cells: 3Tr cell MOS RAM [1], Surrounding Gate Transistor (SGT) [2,3], and NAND-structured cell [4,5]. It has been shown that the proposed cell operates at a low supply voltage, where it is difficult to obtain sufficient read-out voltage in conventional DRAM.…”