A novel gate assist circuit for quick and stable driving of SiC-JFETs in a 3-phase inverter

Zushi, Yusuke; Sato, S.; Matsui, Kohei; Murakami, Yoshinori; Tanimoto, Satoshi

doi:10.1109/apec.2012.6166056

Cited by 43 publications

(12 citation statements)

References 4 publications

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“…Several novel methods have been investigated to move a portion of the gate driver circuitry closer to the power devices [74], [75]. The most broadly applicable methods, however, will move the gate driver directly inside the package with the power device, as shown in Fig.…”

Section: Integrated Circuitsmentioning

confidence: 99%

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Mantooth

Glover

Shepherd

2014

IEEE J. Emerg. Sel. Topics Power Electron.

215

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The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.Index Terms-Gallium nitride (GaN), power electronics, power integrated circuits, power semiconductor devices, silicon carbide (SiC), wide bandgap semiconductors.

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Section: Integrated Circuitsmentioning

confidence: 99%

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Mantooth

Glover

Shepherd

2014

IEEE J. Emerg. Sel. Topics Power Electron.

215

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“…Often, to avoid cross-talk, the high switchingspeed capability of SiC devices has to be compromised. To suppress cross-talk without sacrificing fast switching, several gate assist circuits were developed [102], [110]- [114]. Some are all transistor-based, which can be conveniently integrated with conventional gate driver IC [115], [116].…”

Section: Protectionmentioning

confidence: 99%

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Wang¹,

Zhang²

2016

CPSS TPEA

165

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“…There are also studies of a SiC‐JFET high‐speed gate driver , a low‐surge gate drive with a SiC hybrid module , and other high‐performance gate drivers using SiC devices. Moreover, discussions have also been performed in order to obtain stable drive performance for switching noise in a high‐speed drive in a SiC device .…”

Section: Introductionmentioning

confidence: 99%

Fast and Low Loss Gate Driver for SiC‐MOSFET

Yamaguchi

Magome

Sasaki

2016

Elect Comm in Japan

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SUMMARY This paper presents a gate driver with fast switching and low switching loss for silicon carbide‐metal oxide semiconductor field effect transistors. The proposed driver consists of a very simple gate boost circuit and a speed up circuit, and so is cost‐effective. Normally, conventional gate drive methods include a trade‐off between switching losses and noise. The proposed gate driver can reduce switching losses without increasing surge voltage as well as voltage and current fluctuations. The proposed gate driver is able to eliminate the trade‐offs in the switching characteristics.

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A novel gate assist circuit for quick and stable driving of SiC-JFETs in a 3-phase inverter

Cited by 43 publications

References 4 publications

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

Fast and Low Loss Gate Driver for SiC‐MOSFET

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