A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering

Mobarakeh, Mojtaba Saeidi; Moezi, Negin; Vali, Mehran; Dideban, Daryoosh

doi:10.1016/j.spmi.2016.11.007

Cited by 32 publications

(9 citation statements)

References 22 publications

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“…Due to higher Fermi energy in SiNTFET compared with CNTFET, ON current in SiNTFET is more than CNTFET, and since the work function in silicene structure (4.8 eV) is more than graphene (4.56 eV), the OFF current in CNTFET is placed behind the SiNTFET. 32,33 As expressed previously, change in the bandgap of SiNTFET by applying an electric field is one of the main differences between SiNTFET and CNTFET. (n,m) determines the dimensions of devices, band gap, the number of sub-bands, the group velocity and effective mass.…”

Section: Resultsmentioning

confidence: 98%

A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofI_on/I_off

Salimian

Dideban

2018

ECS J. Solid State Sci. Technol.

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In this paper, we find transfer characteristics of a Silicene nanotube field effect transistor (SiNTFET) by use of transfer matrix method. The emphasis is to study the impact of factors like channel length, chirality and diameter of a tube that influence the device current. Also, we investigate the impact of electric field on the energy gap, input and output characteristics of SiNTFET and carbon nanotube field effect transistor (CNTFET). Since the energy gap of silicon nanotube changes in the presence of an electric field, this feature causes a SiNTFET has more advantages compared to CNTFET. Our result shows that OFF current strongly depends on the characteristics of the nanotube. Hence the I on /I off is varied by changing the chirality, diameter of the nanotube, and perpendicular electric field. We are exceeding high I on /I off ratio, in the order of 10 8 , by variation of the perpendicular electric field in SiNTFET.

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Section: Resultsmentioning

confidence: 98%

A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofI_on/I_off

Salimian

Dideban

2018

ECS J. Solid State Sci. Technol.

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“…The basic parameters of graphene, such as bandgap, affinity, mobility, etc. were redefined by modifying the new material in database, through which the doping effect of graphene in the FET device has been fully proved [34,35]. The modeling details are shown in Figure S4 of Supplementary Material.…”

Section: Resultsmentioning

confidence: 99%

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Jiang

Nie

et al. 2020

Nanophotonics

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AbstractThe hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 107 A/W and a fast response time of 90 µs were obtained. The specific detectivity D* was measured to be 1.46 ⨯ 1013 Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.

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“…In the Silvaco tool, various materials are available which can be used as an alternative of graphene. One attempt has been reported by Mobarakeh et al [23]. A 3C-SiC material is used as a graphene channel.…”

Section: Design Of Graphene Fet With 100 Nm Channel Lengthmentioning

confidence: 99%

Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

Tayade

Lahudkar²

2021

Adv. technol. innov.

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In recent years, demands for high speed and low power circuits have been raised. As conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to satisfy the demands due to short channel effects, the purpose of the study is to design an alternative of MOSFETs. Graphene FETs are one of the alternatives of MOSFETs due to the excellent properties of graphene material. In this work, a user-defined graphene material is defined, and a graphene channel FET is implemented using the Silvaco technology computer-aided design (TCAD) tool at 100 nm and scaled to 20 nm channel length. A silicon channel MOSFET is also implemented to compare the performance. The results show the improvement in subthreshold slope (SS) = 114 mV/dec, ION/IOFF ratio = 14379, and drain induced barrier lowering (DIBL) = 123 mV/V. It is concluded that graphene FETs are suitable candidates for low power applications.

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A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering

Cited by 32 publications

References 22 publications

A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofI_on/I_off

A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofI_on/I_off

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

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A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering

Cited by 32 publications

References 22 publications

A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofIon/Ioff

A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofIon/Ioff

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

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A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofI_on/I_off

A Silicene Nanotube Field Effect Transistor (SiNTFET) with an Electrically Induced Gap and High Value ofI_on/I_off